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參數(shù)資料
| 型號(hào)： | LC35V256ET-70W |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | 256K (32K words x 8 bits) SRAM Control pins: OE and CE |
| 中文描述： | 256K（32K字× 8位）的SRAM控制引腳：OE和行政長官 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 46K |
| 代理商： | LC35V256ET-70W |
No. 6303-4/6
LC35V256EM, ET70W
DC Electrical Characteristics
at Ta = –10 to +70°C, V
CC
= 3.0 to 3.6 V
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Input leakage current
I
LI
V
IN
= 0 to V
CC
V
CE
= V
IH
or V
OE
= V
IH
or V
WE
= V
IL
V
I/O
= 0 to V
CC
I
OH1
= –2.0 mA
I
OH2
= –100 μA
I
OL1
= 2.0 mA
I
OL2
= 100 μA
V
CE
= V
IL
, I
I/O
= 0 mA, V
IN
= V
IH
or V
IL
–1.0
+1.0
μA
Output leakage current
I
LO
–1.0
+1.0
μA
Output high-level voltage
V
OH1
V
OH2
V
OL1
V
OL2
I
CCA2
V
CC
– 0.4
V
CC
– 0.1
V
V
Output low-level voltage
0.4
V
0.4
V
1.2
mA
Operating current drain
I
CCA3
V
CE
= V
IL
, V
IN
= V
IH
or V
IL
I
I/O
= 0 mA, DUTY 100 %
min cycle
20
25
mA
1 μs cycle
Ta
≤
25°C
Ta
≤
60°C
Ta
≤
70°C
1.5
2.5
mA
0.01
μA
Standby mode
I
CCS1
0.8
μA
current drain
4.0
μA
I
CCS2
V
CE
= V
IH
, V
IN
= 0 to V
CC
0.4
mA
Note:
*
Reference values when V
CC
= 3.3 V and Ta = 25°C.
CMOS inputs
V
CE
≥
V
CC
– 0.2 V,
V
IN
= 0 to V
CC
V
CC
– 0.2 V/
0.2 V inputs
CMOS inputs
AC Electrical Characteristics
at Ta = –10 to +70°C, V
CC
= 3.0 to 3.6 V
AC test conditions
Input pulse voltage levels: 0.2 V
CC
to 0.8 V
CC
Input rise and fall times: 5 ns
Input and output timing levels: 1/2 V
CC
Output load: 30 pF (including the jig capacitance)
Parameter
Symbol
min
max
Unit
Read cycle time
t
RC
t
AA
t
CA
t
OA
t
OH
t
COE
t
OOE
t
COD
t
OOD
70
ns
Address access time
70
ns
CE access time
70
ns
OE access time
50
ns
Output hold time
10
ns
CE output enable time
10
ns
OE output enable time
5
ns
CE output disable time
35
ns
OE output disable time
30
ns
Read Cycle
Parameter
Symbol
min
max
Unit
Write cycle time
t
WC
t
AS
t
WP
t
CW
t
WR
t
WR1
t
DS
t
DH
t
DH1
t
WOE
t
WOD
70
ns
Address setup time
0
ns
Write pulse width
55
ns
CE setup time
60
ns
Write recovery time
0
ns
CE write recovery time
0
ns
Data setup time
50
ns
Data hold time
0
ns
CE data hold time
0
ns
WE output enable time
5
ns
WE output disable time
35
ns
Write Cycle
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LC35V256EM | 256K (32K words x 8 bits) SRAM Control pins: OE and CE |
| LC35V256EM-70W | 256K (32K words x 8 bits) SRAM Control pins: OE and CE |
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相關(guān)代理商/技術(shù)參數(shù) |
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| LC35W1000BM | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
| LC35W1000BM-10U | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述: |
| LC35W1000BM-70U | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述: |
| LC35W1000BTS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述: |
| LC35W1000BTS-10U | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
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