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參數(shù)資料
| 型號： | LC35V256ET-70W |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | 256K (32K words x 8 bits) SRAM Control pins: OE and CE |
| 中文描述： | 256K（32K字× 8位）的SRAM控制引腳：OE和行政長官 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 46K |
| 代理商： | LC35V256ET-70W |
Pin Assignment (Top view)
No. 6303-2/6
LC35V256EM, ET70W
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A14
VCC
WE
A13
A8
A9
A11
OE
A10
CE
I/O8
I/O7
I/O6
I/O5
I/O4
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
GND
LC35V256EM-70W
SOP28
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
22
23
24
25
26
27
28
1
2
3
4
5
6
7
21
20
19
18
17
16
15
14
13
12
11
10
9
8
A10
CE
I/O8
I/O7
I/O6
I/O5
I/O4
GND
I/O3
I/O2
I/O1
A0
A1
A2
TSOP28
LC35V256ET-70W
Block Diagram
A6
A7
A8
A9
A10
A11
A12
A13
A14
VCC
GND
I/O1
I/O8
CE
WE
OE
A0A1A2A3A4A5
A
R
Memory cell array
512
×
512
Column I/O
circuit
Column decoder
Address buffer
Output
data
buffer
I
I
c
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LC35V256EM | 256K (32K words x 8 bits) SRAM Control pins: OE and CE |
| LC35V256EM-70W | 256K (32K words x 8 bits) SRAM Control pins: OE and CE |
| LC35W1000BM | Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
| LC35W1000BTS-10U | Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
| LC35W1000BTS-70U | Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LC35W1000BM | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
| LC35W1000BM-10U | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述: |
| LC35W1000BM-70U | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述: |
| LC35W1000BTS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述: |
| LC35W1000BTS-10U | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
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