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參數(shù)資料
| 型號： | L6706 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | SWITCHING REGULATOR, QCC40 |
| 封裝： | 6 X 6 MM, ROHS COMPLIANT, VFQFPN-40 |
| 文件頁數(shù)： | 37/47頁 |
| 文件大小： | 623K |
| 代理商： | L6706 |
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Power dissipation
L6706
42/47
Doc ID 15698 Rev 2
19
Power dissipation
L6706 embeds high current MOSFET drivers for both high side and low side MOSFETs: it is
then important to consider the power the device is going to dissipate in driving them in order
to avoid overcoming the maximum junction operative temperature.
Exposed pad needs to be soldered to the PCB power ground plane through several VIAs in
order to facilitate the heat dissipation.
Two main terms contribute in the device power dissipation: bias power and drivers' power.
The first one (PDC) depends on the static consumption of the device through the supply pins
and it is simply quantifiable as follow (assuming to supply HS and LS drivers with the same
VCC of the device):
Drivers' power is the power needed by the driver to continuously switch on and off the
external MOSFETs; it is a function of the switching frequency and total gate charge of the
selected MOSFETs. It can be quantified considering that the total power PSW dissipated to
switch the MOSFETs (easy calculable) is dissipated by three main factors: external gate
resistance (when present), intrinsic MOSFET resistance and intrinsic driver resistance. This
last term is the important one to be determined to calculate the device power dissipation.
The total power dissipated to switch the MOSFETs results:
External gate resistors helps the device to dissipate the switching power since the same
power PSW will be shared between the internal driver impedance and the external resistor
resulting in a general cooling of the device. When driving multiple MOSFETs in parallel, it is
suggested to use one gate resistor for each MOSFET.
Figure 25.
L6706 dissipated power (quiescent + switching)
P
DC
V
CC
I
CC
I
CCDR
I
BOOT
++
()
=
P
SW
F
SW
Q
GHS
V
BOOT
Q
GLS
V
CCDR
+
()
=
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| L6706TR | 功能描述:DC/DC 開關(guān)控制器 VR11.1 SINGLE PHASE CNTRL W/INT DRI RoHS:否 制造商:Texas Instruments 輸入電壓:6 V to 100 V 開關(guān)頻率: 輸出電壓:1.215 V to 80 V 輸出電流:3.5 A 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風(fēng)格: 封裝 / 箱體:CPAK |
| L6709 | 功能描述:功率驅(qū)動器IC 6-Bit Dual Ph Contlr RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6709TR | 功能描述:功率驅(qū)動器IC 6-Bit Dual Ph Contlr RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6710 | 功能描述:功率驅(qū)動器IC 6-Bit Dual Ph Contlr RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6710TR | 功能描述:功率驅(qū)動器IC 6-Bit Dual Ph Contlr RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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