參數資料
型號： L6706
廠商： STMICROELECTRONICS
元件分類： 穩(wěn)壓器
英文描述： SWITCHING REGULATOR, QCC40
封裝： 6 X 6 MM, ROHS COMPLIANT, VFQFPN-40
文件頁數： 19/47頁
文件大?。?/td> 623K
代理商： L6706
Load transient boost technology
L6706
26/47
Doc ID 15698 Rev 2
11
Load transient boost technology
LTB Technology further enhances the performances of dual-edge asynchronous systems
by reducing the system latencies and immediately turning ON the phase to provide the
correct amount of energy to the load.
By properly designing the LTB network, as well as the LTB gain, the undershoot and the
ring-back can be minimized also optimizing the output capacitors count.
LTB Technology monitors the output voltage through a dedicated pin (see Figure 11)
detecting Load-Transients with selected dV/dt and turning-on immediately the phase.
It then implements a parallel independent loop that (bypassing error amplifier (E/A)
latencies) reacts to load-transients in very short time (< 150 ns).
LTB Technology control loop is reported in Figure 10.
Figure 10.
LTB Technology control loop
The LTB detector is able to detect output load transients by coupling the output voltage
through an RLTB - CLTB network. After detecting a load transient, the LTB ramp is reset and
then compared with the COMP pin level. The resulting duty-cycle programmed is then OR-
ed with the PWM signal by-passing the main control loop. The phase will then be turned-on
and the EA latencies results bypassed as well.
Short LTB pin to SGND to disable the LTB Technology: in this condition the device works
as a dual-edge asynchronous PWM controller.
Sensitivity of the load transient detector and the gain of the LTB ramp can be programmed in
order to control precisely both the undershoot and the ring-back.
●
Detector design. RLTB - CLTB is design according to the output voltage deviation dVOUT
which is desired the controller to be sensitive as follow:
Ref
FB
COMP
VSEN
FBG
R
F
C
F
R
FB
PWM
L
ESR
CO
R
O
d VCOMP
VOUT
ZF(s)
ZFB(s)
V
COMP
C
P
C
FB
LT
B
I DR
OOP
Monitor
RLTB
CLTB
PWM_BOOST
LTB Ramp
LTB
LT Detect
VPROG
GND DROP
RECOVERY
RLTBGAIN
LTBGAIN
R
LTB
dV
OUT
25
μA
------------------
=
C
LTB
1
2
π R
LTB
F
SW
-----------------------------------------
=
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相關代理商/技術參數
參數描述
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