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參數(shù)資料
| 型號： | L6382D_07 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Power management unit for microcontrolled ballast |
| 中文描述： | 微控鎮(zhèn)流器功率管理單元 |
| 文件頁數(shù)： | 9/22頁 |
| 文件大?。?/td> | 272K |
| 代理商： | L6382D_07 |
L6382D
Electrical characteristics
9/22
Symbol
Pin
Parameter
Test condition
Min
Typ
Max
Unit
T
DELAY
12
Propagation delay
(LGI to LSG)
high to low and low to
high
300
ns
R
B
12
Pull down Resistor
to OUT
20
K
High-side floating gate-driver supply
I
LKBOOT
11
V
BOOT
pin leakage
current
V
BOOT
= 580V
5
μA
I
LKOUT
13
OUT pin leakage
current
V
OUT
= 562V
5
μA
R
DS(on)
Synchronous
bootstrap
diode on-
resistance
V
LVG
= HIGH
150
W
Forward Voltage
Drop
at 10 mA forward current
2.4
V
Forward Current
at 5V forward voltage
drop
20
mA
V
REF
V
REF
20
Reference voltage
15mA load.
3.267
3.3
3.366
V
20
Load regulation
IRef = -3 to +30 mA
-20
2
mV
20
Voltage change
15mA load; Vcc = 9V to
15V
15
mV
20
V
REF
latched
protection
2
V
20
V
REF
Clamp
@3mA
V
CC
from 0 to V
CCON
during start-up;Vcc from
V
REF(OFF)
to 0 during
shut-down; V
ref
<2V
1.2
1.4
V
I
REF
20
Current Drive
Capability
-3
+30
mA
Save mode
-3
+10
mA
V
CSI
19
Comparator Level
0.537
0.56
0.582
V
I
CSI
19
Input Bias Current
500
nA
Propagation delay
CSO turn off to LSG low
200
ns
18
High output voltage I
CSO
= 200
μ
A
V
REF
-
0.5V
18
Low output voltage
I
CSO
= -150
μ
A
0.5
V
Table 4. Electrical characteristcs
(T
J
= 25°C, V
CC
= 13V, C
DRIVER
= 1nF
unless otherwise specified)
(continued)
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| L6382D5 | 功能描述:功率因數(shù)校正 IC Pwr management unit RoHS:否 制造商:Fairchild Semiconductor 開關(guān)頻率:300 KHz 最大功率耗散: 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Reel |
| L6382D5TR | 功能描述:功率因數(shù)校正 IC Pwr management unit RoHS:否 制造商:Fairchild Semiconductor 開關(guān)頻率:300 KHz 最大功率耗散: 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Reel |
| L6382DTR | 功能描述:電池管理 Pwr management unit RoHS:否 制造商:Texas Instruments 電池類型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel |
| L6384 | 功能描述:功率驅(qū)動器IC Hi-Volt Half Bridge RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6384 | 制造商:STMicroelectronics 功能描述:600V HALF BRIDGE DRIVER 6384 DIP8 |
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