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參數(shù)資料
| 型號： | L6382D_07 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Power management unit for microcontrolled ballast |
| 中文描述： | 微控鎮(zhèn)流器功率管理單元 |
| 文件頁數(shù)： | 7/22頁 |
| 文件大?。?/td> | 272K |
| 代理商： | L6382D_07 |
L6382D
Electrical characteristics
7/22
4
Electrical characteristics
Table 4. Electrical characteristcs
(T
J
= 25°C, V
CC
= 13V, C
DRIVER
= 1nF
unless otherwise specified)
Symbol
Pin
Parameter
Test condition
Min
Typ
Max
Unit
Supply voltage
V
CCON
10
Turn-on voltage
13
14
15
V
V
CCOFF
10
Turn-off voltage
7.5
8.25
9.2
V
V
CCSM
10
Save mode voltage
12.75
13.8
14.85
V
VSMhys
10
Save mode
hysteresys
0.12
0.16
0.2
V
V
REF(OFF)
10
Reference turn-off
5.7
6
6.4
V
IvccON
10
Start-up current
150
μ
A
IvccSM
10
Save Mode current
consumption
190
μ
A
(1)
150
230
μ
A
Ivcc
10
Quiescent current
in
operating mode
LGI = HGI = high;
no load on VREF.
2
mA
Vz
10
Internal Zener
16.5
17
18
V
High voltage start-up
IMSS
15
Maximum current
V
HVSU
> 50V
20
mA
ILSS
15
Leakage current off
state
V
HVSU
= 600V
40
μA
Two point regulator (TPR) protection
T
PR
st
10
Vcc Protection
level
Operating
mode
14.0
14.5
15.0
V
T
PR
(ON)
10
Vcc Turn-on level
Operating mode; a
fter
the first falling edge on
LSG
12.5
13
13.5
V
T
PR
(OFF)
10
Vcc Turn-off level
Operating mode
; after
the first falling edge on
LSG
12.45
12.95
13.48
V
7
Output voltage on
state
I
TPR
= 200mA
2
V
7
Forward voltage
drop Diode
@ 600mA forward
current.
2.3
V
7
Leakage current off
state
V
TPR
= 13V
5
μA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| L6382D5 | 功能描述:功率因數(shù)校正 IC Pwr management unit RoHS:否 制造商:Fairchild Semiconductor 開關(guān)頻率:300 KHz 最大功率耗散: 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Reel |
| L6382D5TR | 功能描述:功率因數(shù)校正 IC Pwr management unit RoHS:否 制造商:Fairchild Semiconductor 開關(guān)頻率:300 KHz 最大功率耗散: 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Reel |
| L6382DTR | 功能描述:電池管理 Pwr management unit RoHS:否 制造商:Texas Instruments 電池類型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel |
| L6384 | 功能描述:功率驅(qū)動器IC Hi-Volt Half Bridge RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6384 | 制造商:STMicroelectronics 功能描述:600V HALF BRIDGE DRIVER 6384 DIP8 |
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