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參數(shù)資料
| 型號(hào)： | L6382D_07 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Power management unit for microcontrolled ballast |
| 中文描述： | 微控鎮(zhèn)流器功率管理單元 |
| 文件頁數(shù)： | 4/22頁 |
| 文件大?。?/td> | 272K |
| 代理商： | L6382D_07 |
Pin settings
L6382D
4/22
2
Pin settings
2.1
Pin connection
Figure 3.
Pin connection
(top view)
2.2
Pin description
10
11
VCC
BOOT
1
2
3
4
5
6
7
8
9
20
19
18
17
16
15
14
13
12
PFI
LSI
HSI
HEI
PFG
N.C.
TPR
GND
LSG
VREF
CSI
CSO
HEG
N.C.
HVSU
N.C.
OUT
HSG
Table 1. Pin description
Name
Pin N°
Description
1
PFI
Digital input signal to control the PFC gate driver. This pin has to be connected
to a TTL compatible signal.
2
LSI
Digital input signal to control the half-bridge low side driver. This pin has to be
connected to a TTL compatible signal.
3
HSI
Digital input signal to control the half-bridge high side driver. This pin has to be
connected to a TTL compatible signal.
4
HEI
Digital input signal to control the HEG output. This pin has to be connected to a
TTL compatible signal.
5
PFG
PFC Driver Output. This pin is intended to be connected to the PFC power
MOSFET gate. A resistor connected between this pin and the power MOS gate
can be used to reduce the peak current. An internal 10K
resistor toward
ground avoids spurious and undesired MOSFET turn-on. The totem pole
output stage is able to drive the power MOS with a peak current of 120mA
source and 250mA sink.
6
N.C.
Not connected
7
TPR
Input for two point regulator; by coupling the pin with a capacitor to a switching
circuit, it is possible to implement a charge circuit for the Vcc.
8
GND
Chip ground. Current return for both the low-side gate-drive currents and the
bias current of the IC. All of the ground connections of the bias components
should be tied to a trace going to this pin and kept separate from any pulsed
current return.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| L6382D5 | POWER MANAGEMENT UNIT FOR MICROCONTROLLED BALLAST |
| L6382D5TR | POWER MANAGEMENT UNIT FOR MICROCONTROLLED BALLAST |
| L6382D | Power management unit for microcontrolled ballast |
| L6382DTR | Power management unit for microcontrolled ballast |
| L6384 | High-Voltage Half Bridge Driver(高電壓半橋驅(qū)動(dòng)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| L6382D5 | 功能描述:功率因數(shù)校正 IC Pwr management unit RoHS:否 制造商:Fairchild Semiconductor 開關(guān)頻率:300 KHz 最大功率耗散: 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Reel |
| L6382D5TR | 功能描述:功率因數(shù)校正 IC Pwr management unit RoHS:否 制造商:Fairchild Semiconductor 開關(guān)頻率:300 KHz 最大功率耗散: 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Reel |
| L6382DTR | 功能描述:電池管理 Pwr management unit RoHS:否 制造商:Texas Instruments 電池類型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel |
| L6384 | 功能描述:功率驅(qū)動(dòng)器IC Hi-Volt Half Bridge RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| L6384 | 制造商:STMicroelectronics 功能描述:600V HALF BRIDGE DRIVER 6384 DIP8 |
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