參數(shù)資料
型號(hào)： KSB1121
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： High Current Driver Applications
中文描述： 2000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
文件頁數(shù)： 1/4頁
文件大小： 43K
代理商： KSB1121
2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
K
PNP Epitaxial Planar Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
P
C
P
C
*
T
J
Junction Temperature
T
STG
Storage Temperature
* Mounted on Ceramic Board (250mm2 x 0.8mm)
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE1
h
FE2
V
CE
(sat)
Collector-Emitter Saturation Voltage
V
BE
(sat)
Base-Emitter Saturation Voltage
f
T
Current Gain Bandwidth Product
C
ob
Output Capacitance
t
ON
* Turn On Time
t
STG
* Storage Time
t
F
* Fall time
* Pulse Test: PW
≤
20
μ
s, Duty Cycle
≤
1%
h
FE
Classification
Classification
h
FE1
Parameter
Ratings
-30
-25
-6
-2
500
1.3
150
-55 ~ 150
Units
V
V
V
A
mW
W
°
C
°
C
Collector Power Dissipation
Test Condition
I
C
= -10
μ
A, I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -10
μ
A, I
C
= 0
V
CB
= -20V, I
E
=0
V
BE
= -4V, I
C
= 0
V
CE
= -2V, I
C
= -0.1A
V
CE
= -2V, I
C
= -1.5A
I
C
= -1.5A, I
B
= -75mA
I
C
= -1.5A, I
B
= -75mA
V
CE
= -10V, I
C
= -50mA
V
CB
= -10V, I
E
=0, f=1MHz
V
CC
= -12V, V
BE
= -5V
I
B1
=-I
B2
=-25mA
I
C
= -500mA, R
L
=24
Min.
-30
-25
-6
Typ.
Max.
Units
V
V
V
nA
nA
-100
-100
560
DC Current Gain
100
65
-0.35
-0.85
150
32
60
350
25
-0.6
-1.2
V
V
MHz
pF
ns
ns
ns
R
S
T
U
100 ~ 200
140 ~ 280
200 ~ 400
280 ~ 560
KSB1121
High Current Driver Applications
Low Collector-Emitter Saturation Voltage
Large Current Capacity and Wide SOA
Fast Switching Speed
Complement to KSD1621
SZX
Marking
h
FE
Grade
1. Base 2. Collector 3. Emitter
SOT-89
1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KSB1121_05 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP Epitaxial Planar Silicon Transistor
KSB1121STF 功能描述:兩極晶體管 - BJT PNP Epitaxial Planar Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
KSB1121STM 功能描述:兩極晶體管 - BJT PNP Si Transistor Epitaxial Planar RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
KSB1121TTF 功能描述:兩極晶體管 - BJT PNP Epitaxial Planar Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
KSB1149 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Low Collector Saturation Voltage Built-in Damper Diode at E-C
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