參數(shù)資料
型號: KMB3D5PS30QA
廠商: KEC Holdings
英文描述: SBD and P-Ch Trench MOSFET
中文描述: SBD智能交通和P -溝道MOSFET總
文件頁數(shù): 1/5頁
文件大?。?/td> 479K
代理商: KMB3D5PS30QA
2007. 8. 13
1/5
SEMICONDUCTOR
TECHNICAL DATA
KMB3D5PS30QA
SBD and P-Ch Trench MOSFET
Revision No : 2
GENERAL DESCRIPTION
It is particularly suited for switching such as DC/DC Converters.
It is driven as low as 4.5V and fast switching, high efficiency.
FEATURES
V
DSS
=-30V, I
D
=-3.5A.
Drain-Source ON Resistance.
R
DS(ON)
=85m
R
DS(ON)
=180m
(Max.) @ V
GS
=-10V
(Max.) @ V
GS
=-4.5V
MOSFET Maximum Ratings (Ta=25
Unless otherwise noted)
B2
G
H
B1
1
4
5
8
A
P
D
L
T
FLP-8
0.20+0.1/-0.05
T
P
1.27
MILLIMETERS
4.85 0.2
+
3.94 0.2
6.02 0.3
0.4 0.1
0.15+0.1/-0.05
1.63 0.2
+
0.65 0.2
DIM
A
B1
B2
D
G
H
L
Note : *Sorface Mounted on FR4 Board
Schottky Diode Maximum Ratings (Ta=25
Unless otherwise noted)
CHARACTERISTIC
SYMBOL
PATING
UNIT
Repetitive Peak Reverse Voltage
V
RRM
30
V
Average Forward Current
I
F
1.4
A
CHARACTERISTIC
SYMBOL
PATING
UNIT
Drain Source Voltage
V
DSS
-30
V
Gate Source Voltage
V
GSS
20
V
Drain Current
DC
I
D
*
-3.5
A
Pulsed
I
DP
-20
A
Drain Power Dissipation
25
P
D
*
1.4
W
100
1
W
Maximum Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55~150
Thermal Resistance, Junction to Ambient
R
thJA
*
90
/W
KMB3D5PS
30QA
702
Marking
Type Name
Lot No.
PIN CONNECTION (TOP VIEW)
1
2
3
4
8
7
6
5
A
A
S
G
C
C
D
D
1
2
3
4
8
7
6
5
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