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參數(shù)資料
| 型號： | KMB7D1DP30QA |
| 廠商： | KEC Holdings |
| 英文描述： | Dual P-Ch Trench MOSFET |
| 中文描述： | 雙P溝道MOSFET通道 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 484K |
| 代理商： | KMB7D1DP30QA |
2007. 4. 17
1/5
SEMICONDUCTOR
TECHNICAL DATA
KMB7D1DP30QA
Dual P-Ch Trench MOSFET
Revision No : 0
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment and SMPS.
FEATURES
V
DSS
=-30V, I
D
=-7.1A
Drain-Source ON Resistance
R
DS(ON)
=25m
R
DS(ON)
=41m
Super Hige Dense Cell Design
(Max.) @ V
GS
=-10V
(Max.) @ V
GS
=-4.5V
MAXIMUM RATING (Ta=25
)
B2
G
H
B1
1
4
5
8
A
P
D
L
T
FLP-8
0.20+0.1/-0.05
T
P
1.27
MILLIMETERS
4.85 0.2
3.94 0.2
6.02 0.3
0.4 0.1
0.15+0.1/-0.05
1.63 0.2
+
0.65 0.2
DIM
A
B1
B2
D
G
H
L
Note : Surface Mounted on FR4 Board, t
10sec.
PIN CONNECTION (TOP VIEW)
1
2
3
4
8
7
6
5
S1
G1
S2
G2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
CHARACTERISTIC
SYMBOL
N-Ch
UNIT
Drain-Source Voltage
V
DSS
-30
V
Gate-Source Voltage
V
GSS
22
V
Drain Current
DC@T
A
=25
I
D
-7.1
A
DC@T
A
=70
-5.7
Pulsed
I
DP
-40
Drain-Source-Diode Forward Current
I
S
-1.7
A
Drain Power Dissipation
T
A
=25
P
D
1.1
W
T
A
=70
0.7
Maximum Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
Thermal Resistance, Junction to Ambient
R
thJA
110
/W
705
KMB7D1DP
30QA
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