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參數(shù)資料
| 型號(hào)： | KMB6D0DN30QA |
| 廠(chǎng)商： | KEC Holdings |
| 英文描述： | Dual N-Ch Trench MOSFET |
| 中文描述： | 雙N溝道MOSFET通道 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 477K |
| 代理商： | KMB6D0DN30QA |
2007. 4. 3
1/5
SEMICONDUCTOR
TECHNICAL DATA
KMB6D0DN30QA
Dual N-Ch Trench MOSFET
Revision No : 0
GENERAL DESCRIPTION
This planer stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment and SMPS.
FEATURES
V
DSS
=30V, I
D
=6A.
Drain-Source ON Resistance.
R
DS(ON)
=28m
R
DS(ON)
=42m
Super High Dense Cell Design
High Power and Current Handing Capability
(Max.) @V
GS
=10V
(Max.) @V
GS
=4.5V
MAXIMUM RATING (Ta=25
Unless otherwise noted)
PIN CONNECTION (TOP VIEW)
1
2
3
4
8
7
6
5
S1
G1
S2
G2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
* : Surface Mounted on FR4 Board, t
10sec.
B2
G
H
B1
1
4
5
8
A
P
D
L
T
FLP-8
0.20+0.1/-0.05
T
P
1.27
MILLIMETERS
4.85 0.2
+
3.94 0.2
6.02 0.3
0.4 0.1
0.15+0.1/-0.05
1.63 0.2
+
0.65 0.2
DIM
A
B1
B2
D
G
H
L
CHARACTERISTIC
SYMBOL
PATING
UNIT
Drain Source Voltage
V
DSS
30
V
Gate Source Voltage
V
GSS
20
V
Drain Current
DC
I
D
*
6
A
Pulsed
(note1)
I
DP
20
A
Drain Source Diode Forward Current
I
S
1.3
A
Drain Power Dissipation
25
P
D
*
2
W
100
1.6
W
Maximum Junction Temperature
T
j
-50~150
Storage Temperature Range
T
stg
-50~150
Thermal Resistance, Junction to Ambient
R
thJA
*
78
/W
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|---|---|
| KMB6D0DN30QA_08 | 制造商:KEC 制造商全稱(chēng):KEC(Korea Electronics) 功能描述:Dual N-Ch Trench MOSFET |
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