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參數(shù)資料
| 型號： | KMB7D0DN40QA |
| 廠商： | KEC Holdings |
| 英文描述： | Dual N-Ch Trench MOSFET |
| 中文描述： | 雙N溝道MOSFET通道 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 470K |
| 代理商： | KMB7D0DN40QA |
1/4
SEMICONDUCTOR
TECHNICAL DATA
KMB7D0DN40QA
Dual N-Ch Trench MOSFET
Revision No : 0
GENERAL DESCRIPTION
This planer stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment and SMPS.
FEATURES
V
DSS
=40V, I
D
=7A.
Drain-Source ON Resistance.
R
DS(ON)
=25m
R
DS(ON)
=45m
Super High Dense Cell Design
High Power and Current Handing Capability
(Max.) @V
GS
=10V
(Max.) @V
GS
=4.5V
Maximum Ratings (Ta=25
Unless otherwise noted)
B2
G
H
B1
1
4
5
8
A
P
D
L
T
FLP-8
0.20+0.1/-0.05
T
P
1.27
MILLIMETERS
4.85 0.2
3.94 0.2
6.02 0.3
0.4 0.1
0.15+0.1/-0.05
1.63 0.2
0.65 0.2
DIM
A
B1
B2
D
G
H
L
G1
S1
D1
D1
G2
D2
D2
S2
N-Channel MOSFET
P-Channel MOSFET
1
2
3
4
8
7
6
5
S1
G1
S2
G2
D1
D1
D2
D2
PIN CONNECTION (TOP VIEW)
2007. 4. 3
CHARACTERISTIC
SYMBOL
PATING
UNIT
Drain Source Voltage
V
DSS
40
V
Gate Source Voltage
V
GSS
25
V
Drain Current
DC
I
D
*
7
A
Pulsed
(note1)
I
DP
22
A
Drain Source Diode Forward Current
I
S
1.7
A
Drain Power Dissipation
25
P
D
*
2
W
100
1.44
W
Maximum Junction Temperature
T
j
-55~150
Storage Temperature Range
T
stg
-55~150
Thermal Resistance, Junction to Ambient
R
thJA
*
62.5
/W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KMB7D0DN40QA_0712 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:FLP-8 PACKAGE |
| KMB7D0DN40QA_09 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:Dual N-Ch Trench MOSFET |
| KMB7D0N40QA | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:N-Ch Trench MOSFET |
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| KMB7D0NP30QA_11 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:N and P-Ch Trench MOSFET |
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