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參數(shù)資料
| 型號： | KMB2D0N60SA |
| 廠商： | KEC Holdings |
| 英文描述： | N-Ch Trench MOSFET |
| 中文描述： | N溝道溝道MOSFET |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 482K |
| 代理商： | KMB2D0N60SA |
2007. 4. 17
1/5
SEMICONDUCTOR
TECHNICAL DATA
KMB2D0N60SA
N-Ch Trench MOSFET
Revision No : 0
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment and SMPS.
FEATURES
V
DSS
=60V, I
D
=2A
Drain-Source ON Resistance
R
DS(ON)
=160m
R
DS(ON)
=220m
Super Hige Dense Cell Design
(Max.) @ V
GS
=10V
(Max.) @ V
GS
=4.5V
MAXIMUM RATING (Ta=25
)
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
SOT-23
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
M
J
K
E
B
1
2
3
H
G
A
N
C
D
L
L
P
P
+
Note : Package Mounted on 99.5% Alumina (10
8
0.6mm)
PIN CONNECTION (TOP VIEW)
CHARACTERISTIC
SYMBOL
N-Ch
UNIT
Drain-Source Voltage
V
DSS
60
V
Gate-Source Voltage
V
GSS
20
V
Drain Current
DC@T
A
=25
I
D
2.0
A
DC@T
A
=70
1.6
Pulsed
I
DP
10
Drain-Source-Diode Forward Current
I
S
1.0
A
Drain Power Dissipation
T
A
=25
P
D
1.25
W
T
A
=70
0.8
Maximum Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
Thermal Resistance, Junction to Ambient
R
thJA
100
/W
2
3
1
G
S
D
3
1
2
KND
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|---|---|
| KMB3D0P30SA | P-Ch Trench MOSFET |
| KMB3D5PS30QA | SBD and P-Ch Trench MOSFET |
| KMB4D0N30SA | N-Ch Trench MOSFET |
| KMB6D0DN30QA | Dual N-Ch Trench MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KMB2D0N60SA_08 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:N-Ch Trench MOSFET |
| KMB3D0P30SA | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:P-Ch Trench MOSFET |
| KMB3D5N40SA | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:N-Ch Trench MOSFET |
| KMB3D5PS30QA | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:SBD and P-Ch Trench MOSFET |
| KMB3D9N40TA | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:N-Ch Trench MOSFET |
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