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參數(shù)資料
| 型號(hào)： | KMB060N60PA |
| 廠商： | KEC Holdings |
| 英文描述： | N CHANNEL MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | N通道MOS場(chǎng)效應(yīng)管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 493K |
| 代理商： | KMB060N60PA |
2007. 8. 9
1/6
SEMICONDUCTOR
TECHNICAL DATA
KMB060N60PA
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
Revision No : 2
General Description
It s mainly suitable for low viltage applications such as automotive,
DC/DC converters and a load switch in battery powered applications
FEATURES
V
DSS
= 60V, I
D
= 60A
Drain-Source ON Resistance :
R
DS(ON)
=14m
(Max.) @V
GS
= 10V
MOSFET MAXIMUM RATING (Ta=25
Unless otherwise noted)
DIM
A
B
C
D
E
F
G
H
I
MILLIMETERS
+
9.9 0.2
15.95 MAX
1.3+0.1/-0.05
TO-220AB
1.46
J
K
L
M
N
O
P
0.8+
3.6 0.2
+
2.8 0.1
+
3.7
2.54 0.2
+
+
4.5 0.2
2.4 +
1.27+
1.4 +
13.08+
+
9.2 0.2
0.5+0.1/-0.05
1.5
A
F
B
J
G
K
M
L
E
I
O
C
H
N
N
Q
D
Q
P
1. GATE
2. DRAIN
3. SOURCE
1
2
3
G
D
S
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
V
DSS
60
V
Gate-Source Voltage
V
GSS
25
V
Drain Current
DC
I
D
*
60
A
Pulsed (Note 1)
I
DP
240
A
Drain-Source Diode Forward Current
I
S
60
A
Drain Power Dissipation
P
D
* 25
150
W
Maximum Junction Temperature
T
j
-55
175
Storage Temperature Range
T
stg
-55
175
Note1) Pulse Test : Pulse width
10 S Duty cycle
1%
CHARACTERISTIC
SYMBOL
RATING
UNIT
Thermal Resistance, Junction-to-Ambient
R
thJA
62.5
/W
Thermal Resistance, Junction-to-Case
R
thJC
1.0
/W
Thermal Characteristics
Equivalent Circuit
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