參數(shù)資料
型號(hào): KM736V790
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128Kx36-Bit Synchronous Pipelined Burst SRAM(128Kx36位同步流水線脈沖靜態(tài) RAM)
中文描述: 128K × 36至位同步流水線突發(fā)靜態(tài)存儲(chǔ)器(128K × 36至位同步流水線脈沖靜態(tài)內(nèi)存)
文件頁(yè)數(shù): 6/15頁(yè)
文件大?。?/td> 317K
代理商: KM736V790
KM736V790
128Kx36 Synchronous SRAM
- 6 -
Rev 1.0
May.
1998
PASS-THROUGH TRUTH TABLE
NOTE
: 1. This operation makes written data immediately available at output during a read cycle preceded by a write cycle.
Previous Cycle
Present Cycle
Next Cycle
Operation
WRITE
Operation
CS
1
WRITE
OE
Write Cycle, All bytes
Address=An-1, Data=Dn-1
All L
Initiate Read Cycle
Address=An
Data=Qn-1 for all bytes
L
H
L
Read Cycle
Data=Qn
Write Cycle, All bytes
Address=An-1, Data=Dn-1
All L
No new cycle
Data=Qn-1 for all bytes
H
H
L
No carryover from
previous cycle
Write Cycle, All bytes
Address=An-1, Data=Dn-1
All L
No new cycle
Data=High-Z
H
H
H
No carryover from
previous cycle
Write Cycle, One byte
Address=An-1, Data=Dn-1
One L
Initiate Read Cycle
Address=An
Data=Qn-1 for one byte
L
H
L
Read Cycle
Data=Qn
Write Cycle, One byte
Address=An-1, Data=Dn-1
One L
No new cycle
Data=Qn-1 for one byte
H
H
L
No carryover from
previous cycle
ABSOLUTE MAXIMUM RATINGS*
*NOTE
: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on V
DD
Supply Relative to V
SS
V
DD
-0.3 to 4.6
V
Voltage on V
DDQ
Supply Relative to V
SS
V
DDQ
V
DD
V
Voltage on Input Pin Relative to V
SS
V
IN
-0.3 to 6.0
V
Voltage on I/O Pin Relative to V
SS
V
IO
-0.3 to V
DDQ
+0.5
V
Power Dissipation
P
D
1.6
W
Storage Temperature
T
STG
-65 to 150
°
C
°
C
°
C
Operating Temperature
T
OPR
0 to 70
Storage Temperature Range Under Bias
T
BIAS
-10 to 85
OPERATING CONDITIONS
(0
°
C
T
A
70
°
C)
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
V
DD
3.135
3.3
3.6
V
V
DDQ
3.135
3.3
3.6
V
Ground
V
SS
0
0
0
V
CAPACITANCE*
(T
A
=25
°
C, f=1MHz)
*NOTE
: Sampled not 100% tested.
Parameter
Symbol
Test Condition
Min
Max
Unit
Input Capacitance
C
IN
V
IN
=0V
-
5
pF
Output Capacitance
C
OUT
V
OUT
=0V
-
7
pF
相關(guān)PDF資料
PDF描述
KM736V795 128Kx36-Bit Synchronous Pipelined Burst SRAM(128Kx36位同步流水線脈沖靜態(tài) RAM)
KM736V799 128Kx36-Bit Synchronous Pipelined Burst SRAM(128Kx36位同步流水線脈沖靜態(tài) RAM)
KM93C46 1K BIT SERIAL ELECTRICALLY ERASABLE PROM
KMA3D0N20SA N-Ch Trench MOSFET
KMB010P30QA P-Ch Trench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM736V887 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18 Synchronous SRAM
KM736V989 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 Synchronous SRAM
KM737N 制造商:FRONTIER 制造商全稱:Frontier Electronics. 功能描述:10mm Adjustable Shielded RF Coil (I)
KM737N-LFR 制造商:FRONTIER 制造商全稱:Frontier Electronics. 功能描述:10mm Adjustable Shielded RF Coil (I)
KM738N 制造商:FRONTIER 制造商全稱:Frontier Electronics. 功能描述:10mm Adjustable Shielded RF Coil (I)