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參數資料
| 型號： | KM736V795 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Kx36-Bit Synchronous Pipelined Burst SRAM(128Kx36位同步流水線脈沖靜態(tài) RAM) |
| 中文描述： | 128K × 36至位同步流水線突發(fā)靜態(tài)存儲器（128K × 36至位同步流水線脈沖靜態(tài)內存） |
| 文件頁數： | 1/15頁 |
| 文件大?。?/td> | 316K |
| 代理商： | KM736V795 |
KM736V795
128Kx36 Synchronous SRAM
- 1 -
Rev 1.0
May. 1998
Document Title
128Kx36-Bit Synchronous Pipelined Burst SRAM
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision History
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Final
History
Initial draft
Change DC characteristics V
DD
condition from V
DD
=3.3V+10%/-5% Change
Input/output leackage currant from
±1μ
A to
±
2
μ
A
Modify Read timing & Power down cycle timing.
Change I
SB2
value from 30mA to 20mA.
Remove DC characteristics I
SB1
- L ver.& I
SB2
- L ver .
Remove Low power version.
Change Undershoot spec
from -3.0V(pulse width
≤
20ns) to -2.0V(pulse width
≤
t
CYC
/2)
Add Overshoot spec 4.6V((pulse width
≤
t
CYC
/2)
Change V
IN
max from 5.5V to V
DD
+0.5V
Change I
SB2
value from 20mA to 30mA.
Change V
DD
condition from V
DD
=3.3V+10%/-5% to V
DD
=3.3V+0.3V/-0.165V.
Modify DC characteristics( Input Leakage Current test Conditions)
form V
DD
=V
SS to
V
DD
to Max.
Final spec Release
Draft Date
February. 02. 1998
February. 12. 1998
April. 14. 1998
May. 13. 1998
May. 14. 1998
May. 15. 1998
Rev. No.
0.0
0.1
0.2
0.3
0.4
1.0
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