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參數(shù)資料
| 型號： | KM736V799 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Kx36-Bit Synchronous Pipelined Burst SRAM(128Kx36位同步流水線脈沖靜態(tài) RAM) |
| 中文描述： | 128K × 36至位同步流水線突發(fā)靜態(tài)存儲器（128K × 36至位同步流水線脈沖靜態(tài)內(nèi)存） |
| 文件頁數(shù)： | 1/17頁 |
| 文件大?。?/td> | 404K |
| 代理商： | KM736V799 |
KM736V799
128Kx36 Synchronous SRAM
- 1 -
Rev 2.0
July. 1998
Document Title
128Kx36-Bit Synchronous Pipelined Burst SRAM
Revision History
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Final
Final
History
Initial draft
Change Undershoot spec
from -3.0V(pulse width
≤
20ns) to -2.0V(pulse width
≤
t
CYC
/2)
Add Overshoot spec 4.6V(pulse width
≤
t
CYC
/2)
Change V
IH
max from 5.5V to V
DD
+0.5V
Change t
CD
from 3.2ns to 3.1ns at bin -50.
Change t
OE
from 3.2ns to 3.1ns at bin -50.
Change setup from 1.5ns to 1.4ns at bin -50.
Change t
CYC
from 5.5ns to 5.4ns at bin -55.
Change t
CD
from 3.5ns to 3.1ns at bin -55.
Change t
OE
from 3.5ns to 3.1ns at bin -55.
Change setup from 1.5ns to 1.4ns at bin -55.
Add t
CYC
175Mhz.
Change I
SB2
from 20mA to 30mA.
Modify DC characteristics( Input Leakage Current test Conditions)
form V
DD
=V
SS to
V
DD
to Max.
Final Release.
Add t
CYC
225Mhz.
Draft Date
April . 14. 1998
April . 20. 1998
May . 23. 1998
May . 25. 1998
May . 30. 1998
June. 08. 1998
June. 15 . 1998
July. 10 . 1998
Rev. No
0.0
0.1
0.2
0.3
.
0.4
0.5
1.0
2.0
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
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