參數(shù)資料
型號(hào): KM68V1000B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128K x8 Bit Low Power and Low Voltage CMOS Static RAM(128K x 8位低功耗和低電壓CMOS 靜態(tài) RAM)
中文描述: 128K的x8位低功耗和低電壓的CMOS靜態(tài)RAM(128K的× 8位低功耗和低電壓的CMOS靜態(tài)RAM)的
文件頁(yè)數(shù): 6/10頁(yè)
文件大小: 154K
代理商: KM68V1000B
KM68V1000B, KM68U1000B Family
CMOS SRAM
Revision 2.0
March 1998
Address
Data Out
Previous Data Valid
Data Valid
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS
1
=OE=V
lL
, WE=V
IH
)
t
AA
t
RC
t
OH
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
Data Valid
High-Z
CS
1
Address
OE
Data ou
t
NOTES
(READ CYCLE)
1.
t
HZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
t
HZ
(Max.) is less than
t
LZ
(Min.) both for a given device and from device to device
interconnection.
CS
2
t
OH
t
AA
t
OLZ
t
LZ
t
OHZ
t
HZ(1,2)
t
RC
t
CO2
t
OE
t
CO1
相關(guān)PDF資料
PDF描述
KM68V1002A 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 靜態(tài) RAM)
KM68V1002AI 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 靜態(tài) RAM)
KM68V1002B 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 靜態(tài) RAM)
KM68V1002BI 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 靜態(tài) RAM)
KM68V1002C 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 靜態(tài) RAM)
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