參數(shù)資料
型號: KM68V1002B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 靜態(tài) RAM)
中文描述: 128K的× 8位高速CMOS靜態(tài)RAM(3.3V的工作)(128K的× 8位高速的CMOS靜態(tài)RAM)的
文件頁數(shù): 1/9頁
文件大小: 138K
代理商: KM68V1002B
KM68V1002B/BL, KM68V1002BI/BLI
CMOS SRAM
PRPreliminary
Rev 2.1
- 1 -
August 1998
Document Title
128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out.
Operated at Commercial and Industrial Temperature Range.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev No.
Rev. 0.0
Rev.1.0
Rev.2.0
Rev. 2.1
Remark
Design Target
Preliminary
Final
Final
History
Initial release with Design Target.
Release to Preliminary Data Sheet.
1. Replace Design Target to Preliminary.
Release to Final Data Sheet.
2.1. Delete Preliminary
2.2. Delete 32-SOJ-300 package
2.3. Add Capacitive load of the test environment in A.C test load
2.4. Change D.C characteristics
Previous spec.
(8/10/12ns part)
I
CC
160/150/140mA
I
SB
Change Standby and Data Retention Current for L-ver.
Items
I
SB
I
DR
at 3.0V
I
DR
at 2.0V
Items
Changed spec.
(8/10/12ns part)
160/155/150mA
50mA
30mA
Previous spec.
0.5mA
0.4mA
0.3mA
Changed spec.
0.7mA
0.5mA
0.4mA
Draft Data
Apr. 1st, 1997
Jun. 1st, 1997
Feb. 25th, 1998
Aug. 4th, 1998
相關(guān)PDF資料
PDF描述
KM68V1002BI 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 靜態(tài) RAM)
KM68V1002C 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 靜態(tài) RAM)
KM68V1002CI 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 靜態(tài) RAM)
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KM68V257E 32K x 8 Bit High-Speed CMOS Static RAM (3.3V Operating)(32K x 8位高速CMOS 靜態(tài) RAM)
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