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參數(shù)資料
| 型號： | KM68V1002A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 靜態(tài) RAM) |
| 中文描述： | 128K的× 8位高速CMOS靜態(tài)RAM（3.3V的工作）（128K的× 8位高速的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 128K |
| 代理商： | KM68V1002A |
KM68V1002A, KM68V1002AI
CMOS SRAM
PRELIMINARY
Rev 5.0
- 1 -
February 1998
Document Title
128Kx8 High Speed Static RAM(3.3V Operating), Revolutionary Pin out.
Operated at Commercial and Industrial Temperature Range.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev. No.
Rev. 0.0
Rev. 1.0
Rev. 2.0
Rev. 3.0
Rev. 4.0
Rev. 5.0
Remark
Design Target
Preliminary
Final
Final
Final
Final
History
Initial release with Design Target.
Release to Preliminary Data Sheet.
1.1. Replace Design Target to Preliminary
Release to final Data Sheet.
2.1. Delete Preliminary
Add Low Power Product and update D.C parameters.
3.1. Add Low Power Products with I
SB1
=0.5mA and Data Retention
Mode(L-ver. only)
3.2. Update D.C parameters.
Previous spec.
(12/15/17/20ns part)
I
CC
170/165/160/155mA
I
SB
30mA
I
SB1
10mA
Add Industrial Temperature Range parts and 300mil 32-SOJ PKG
4.1. Add 32-Pin 300mil-SOJ Package.
4.2. Add Industrial Temperature Range parts with the same parame-
ters as Commercial Temperature Range parts.
4.2.1. Add KM68V1002AI/ALI parts for Industrial Temperature
Range.
4.2.2. Add ordering information.
4.2.3. Add the condition for operating at Industrial Temp. Range.
4.3. Add timing diagram to define t
WP
as
″(
Timing Wave Form of
Write Cycle(CS=Controlled)
″
5.1. Delete L-version.
5.2. Delete Data Retention Characteristics and Wavetorm.
5.3. Delete 17ns Part
5.4. Add Capacitive load of the test environment in A.C test load
Items
Updated spec.
(12/15/17/20ns part)
140/135/135/130mA
20mA
5mA
Draft Data
Jan. 18th, 1995
Apr. 22th, 1995
Feb. 29th, 1996
Jul. 16th, 1996
Jun. 2nd, 1997
Feb. 25th, 1998
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM68V1002AI | 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 靜態(tài) RAM) |
| KM68V1002B | 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 靜態(tài) RAM) |
| KM68V1002BI | 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 靜態(tài) RAM) |
| KM68V1002C | 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 靜態(tài) RAM) |
| KM68V1002CI | 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 靜態(tài) RAM) |
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