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參數(shù)資料
| 型號： | KM68U512B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64Kx8 bit Low Power and Low Voltage CMOS Static RAM(64K x8位高速CMOS 靜態(tài) RAM) |
| 中文描述： | 64Kx8位低功耗和低電壓的CMOS靜態(tài)RAM（64K的x8位高速的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 158K |
| 代理商： | KM68U512B |
KM68V512B, KM68U512B Family
CMOS SRAM
Advance
Revision 0.0
November 1997
3
PRODUCT LIST
Commercial Temperature Products(0~70
°
C)
Industrial Temperature Products(-40~85
°
C)
Part Name
Function
Part Name
Function
KM68V512BLG-8L
KM68V512BLG-10L
KM68V512BLT-8L
KM68V512BLT-10L
KM68U512BLG-8L
KM68U512BLG-10L
KM68U512BLT-8L
KM68U512BLT-10L
32-SOP, 85ns, 3.3V, LL
32-SOP, 100ns, 3.3V, LL
32-TSOP1 F, 85ns, 3.3V, LL
32-TSOP1 F, 100ns, 3.3V, LL
32-SOP, 85ns, 3.0V, LL
32-SOP, 100ns, 3.0V, LL
32-TSOP1 F, 85ns, 3.0V, LL
32-TSOP1 F, 100ns, 3.0V, LL
KM68V512BLGI-8L
KM68V512BLGI-10L
KM68V512BLTI-8L
KM68V512BLTI-100L
KM68V512BLTGI-8L
KM68V512BLTGI-100L
KM68U512BLGI-8L
KM68U512BLGI-10L
KM68U512BLTI-8L
KM68U512BLTI-10L
KM68U512BLTGI-8L
KM68U512BLTGI-10L
32-SOP, 85ns, 3.3V, LL
32-SOP, 100ns, 3.3V, LL
32-TSOP1 F, 85ns, 3.3V, LL
32-TSOP1 F, 100ns, 3.3V, LL
32-sTSOP1 F, 85ns,3.3V,LL
32-sTSOP1 F, 100ns,3.3V,LL
32-SOP, 85ns, 3.0V, LL
32-SOP, 100ns, 3.0V, LL
32-TSOP1 F, 85ns, 3.0V, LL
32-TSOP1 F, 100ns, 3.0V, LL
32-sTSOP1 F, 85ns, 3.0V, LL
32-sTSOP1 F, 100ns,3.0V, LL
FUNCTIONAL DESCRIPTION
1. X means don
′
t care (Must be in high or low states)
CS
1
CS
2
OE
WE
I/O
Mode
Power
H
X
1)
X
1)
X
1)
High-Z
Deselected
Standby
X
1)
L
X
1)
X
1)
High-Z
Deselected
Standby
L
H
H
H
High-Z
Output Disabled
Active
L
H
L
H
Dout
Read
Active
L
H
X
1)
L
Din
Write
Active
ABSOLUTE MAXIMUM RATINGS
1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item
Symbol
Ratings
Unit
Remark
Voltage on any pin relative to Vss
V
IN
,V
OUT
-0.5 to V
CC
+0.5
V
-
Voltage on Vcc supply relative to Vss
V
CC
-0.3 to 4.6
V
-
Power Dissipation
P
D
1
W
-
Storage temperature
T
STG
-65 to 150
°
C
°
C
°
C
-
Operating Temperature
T
A
0 to 70
KM68V512BL, KM68U512BL
-40 to 85
KM68V512BLI, KM68U512BLI
Soldering temperature and time
T
SOLDER
260
°
C, 10sec (Lead Only)
-
-
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM68V512B | 64Kx8 bit Low Power and Low Voltage CMOS Static RAM(64K x8位高速CMOS 靜態(tài) RAM) |
| KM68V1000B | 128K x8 Bit Low Power and Low Voltage CMOS Static RAM(128K x 8位低功耗和低電壓CMOS 靜態(tài) RAM) |
| KM68V1002A | 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 靜態(tài) RAM) |
| KM68V1002AI | 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 靜態(tài) RAM) |
| KM68V1002B | 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 靜態(tài) RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM68V1000B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BL | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BL/L-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BLE | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BLE/LE-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
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