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參數(shù)資料
| 型號(hào)： | KM68U512B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64Kx8 bit Low Power and Low Voltage CMOS Static RAM(64K x8位高速CMOS 靜態(tài) RAM) |
| 中文描述： | 64Kx8位低功耗和低電壓的CMOS靜態(tài)RAM（64K的x8位高速的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 158K |
| 代理商： | KM68U512B |
KM68V512B, KM68U512B Family
CMOS SRAM
Advance
Revision 0.0
November 1997
2
64Kx8 bit Low Power and Low Voltage CMOS Static RAM
GENERAL DESCRIPTION
The KM68V512B and KM68U512B families are fabricated
by SAMSUNG
′
s advanced CMOS process technology. The
families support various operating temperature ranges and
has various package types for user flexibility of system
design. The family also support low data retention voltage
for battery back-up operation with low data retention current.
FEATURES
Process Technology : TFT
Organization : 64Kx8
Power Supply Voltage
KM68V512A family : 3.0~3.6V
KM68U512A family : 2.7~3.3V
Low Data Retention Voltage : 2V(Min)
Three state output and TTL Compatible
Package Type : 32-SOP-525, 32-TSOP1-0820F,
32-TSOP1-0813.4F
PIN DESCRIPTION
Name
Function
Name
Function
CS
1
,CS
2
Chip Select Inputs
I/O
1
~I/O
8
Data Inputs/Outputs
OE
Output Enable
Vcc
Power
WE
Write Enable Input
Vss
Ground
A
0
~A
15
Address Inputs
N.C
No Connection
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
Product Family
Operating
Temperature
V
CC
Range
Speed (ns)
Power Dissipation
PKG Type
Standby
(Isb
1
, Max)
Operating
(Icc
2
, Max)
KM68V512BL-L
Commercial(0~70
°
C)
3.0 ~ 3.6V
85
1)
/100ns
10
μ
A
30mA
32-SOP
32-TSOP1-F
32-sTSOP1-F
KM68U512BL-L
2.7 ~ 3.3V
25mA
KM68V512BLI-L
Industrial(-40~85
°
C)
3.0 ~ 3.6V
30mA
KM68U512BLI-L
2.7 ~ 3.3V
25mA
FUNCTIONAL BLOCK DIAGRAM
32-TSOP
Type1 - Forward
32-
S
TSOP
TYPE1 - FORWARD
10
11
12
13
14
15
16
32-SOP
N.C
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
WE
A13
A8
A9
A11
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
N.C
CS2
A11
A9
A8
A13
A15
N.C
N.C
A7
A6
A5
A4
OE
I/O8
VSS
A0
A1
A2
A3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
OE
I/O6
I/O2
A0
A1
A2
A3
A11
A9
A8
A13
WE
N.C
N.C
A14
A7
A6
A5
A4
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
Precharge circuit.
Memory array
512 rows
128
×
8 columns
I/O Circuit
Column select
Clk gen.
Row
select
A0
A1
A2
A3
A9
A11
A10
A4
A5
A6
A7
A8
A12
A14
CS1
CS2
WE
I/O
1
Data
cont
Data
cont
OE
I/O
8
A13
A15
Control
logic
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM68V512B | 64Kx8 bit Low Power and Low Voltage CMOS Static RAM(64K x8位高速CMOS 靜態(tài) RAM) |
| KM68V1000B | 128K x8 Bit Low Power and Low Voltage CMOS Static RAM(128K x 8位低功耗和低電壓CMOS 靜態(tài) RAM) |
| KM68V1002A | 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 靜態(tài) RAM) |
| KM68V1002AI | 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 靜態(tài) RAM) |
| KM68V1002B | 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)(128K x 8位高速CMOS 靜態(tài) RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM68V1000B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BL | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BL/L-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BLE | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
| KM68V1000BLE/LE-L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K X 8bit Low Power and Low Voltage CMOS Statinc RAM |
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