參數資料
型號: KM48S2020C
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1M x 8Bit x 2 Banks Synchronous DRAM(1M x 8位 x 2組同步動態(tài)RAM)
中文描述: 1M × 8位× 2銀行同步DRAM(1米× 8位× 2組同步動態(tài)RAM)的
文件頁數: 5/44頁
文件大?。?/td> 605K
代理商: KM48S2020C
KM48S2020C
REV. 5 Feb. '98
CMOS SDRAM
1. Measured with outputs open.
2. Refresh period is 64ms.
3. KM48S2020CT-G**
4. KM48S2020CT-F**
Notes :
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
CAS
Latency
Version
Unit
Note
-8
-H
-L
-10
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
t
RC
(min)
I
OL
= 0 mA
90
85
85
75
mA
1
Precharge standby current in
power-down mode
I
CC2
P
CKE
V
IL
(max), t
CC
= 15ns
1
mA
I
CC2
PS
CKE & CLK
V
IL
(max), t
CC
=
1
Precharge standby current in
non power-down mode
I
CC2
N
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
15
mA
I
CC2
NS
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
4
Active standby current in
power-down mode
I
CC3
P
CKE
V
IL
(max), t
CC
= 15ns
2
mA
I
CC3
PS
CKE & CLK
V
IL
(max), t
CC
=
1
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 15ns
Input signals are changed one time during 30ns
25
mA
I
CC3
NS
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
15
mA
Operating current
(Burst mode)
I
CC4
I
OL
= 0 mA
Page burst
2Banks activated
t
CCD
= 2CLKs
3
110
95
95
95
mA
1
2
85
95
85
85
Refresh current
I
CC5
t
RC
t
RC
(min)
55
55
55
50
mA
2
Self refresh current
I
CC6
CKE
0.2V
1
mA
3
250
uA
4
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相關代理商/技術參數
參數描述
KM48S2020CT-G10 制造商:Samsung Semiconductor 功能描述:
KM48S8020AT-G10 制造商:Samsung Electro-Mechanics 功能描述:SDRAM, 2x 4Mx 8, 54 Pin, Plastic, TSOP
KM48S8030 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8Bit x 4 Banks Synchronous DRAM
KM48S8030C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8Bit x 4 Banks Synchronous DRAM
KM48S8030CT-G/FA 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 8Bit x 4 Banks Synchronous DRAM