- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374356 > KM48C514D (SAMSUNG SEMICONDUCTOR CO. LTD.) High Speed 512K x 8Bit CMOS Dynamic RAM with Extended Data Out(高速512K x 8位 CMOS 動(dòng)態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) PDF資料下載
參數(shù)資料
| 型號(hào)： | KM48C514D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | High Speed 512K x 8Bit CMOS Dynamic RAM with Extended Data Out(高速512K x 8位 CMOS 動(dòng)態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) |
| 中文描述： | 高速的擴(kuò)展數(shù)據(jù)輸出（高速為512k × 8位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器（帶擴(kuò)展數(shù)據(jù)輸出）的CMOS為512k × 8位動(dòng)態(tài)隨機(jī)存儲(chǔ)器） |
| 文件頁數(shù)： | 3/21頁 |
| 文件大?。?/td> | 393K |
| 代理商： | KM48C514D |
KM48C514D
CMOS DRAM
High Speed
ABSOLUTE MAXIMUM RATINGS
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted
to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Parameter
Symbol
Rating
Units
Voltage on any pin relative to V
SS
V
IN,
V
OUT
-1.0 to +7.0
V
Voltage on V
CC
supply relative to V
SS
V
CC
-1.0 to +7.0
V
Storage Temperature
Tstg
-55 to +150
°
C
Power Dissipation
P
D
1
W
Short Circuit Output Current
I
OS
Address
50
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to Vss, T
A
= 0 to 70
°
C)
*1 : V
CC
+2.0/20ns(5V), Pulse width is measured at V
CC
*2 : -2.0V/20ns(5V), Pulse width is measured at V
SS
Parameter
Symbol
Min
Typ
Max
Units
Supply Voltage
V
CC
4.5
5.0
5.5
V
Ground
V
SS
0
0
0
V
Input High Voltage
V
IH
2.4
-
V
CC
+1.0
*1
0.8
V
Input Low Voltage
V
IL
-1.0
*2
-
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted.)
Parameter
Symbol
Min
Max
Units
Input Leakage Current (Any input 0
≤
V
IN
≤
V
IN
+0.5V,
all other input pins not under test=0 Volt)
I
I(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V
≤
V
OUT
≤
V
CC
)
I
O(L)
-5
5
uA
Output High Voltage Level(I
OH
=-2mA)
V
OH
2.4
-
V
Output Low Voltage Level(I
OL
=2mA)
V
OL
-
0.4
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM48C8100B | 8M x 8bit CMOS Dynamic RAM with Fast Page Mode(8M x 8位CMOS 動(dòng)態(tài)RAM(帶快速頁模式)) |
| KM48C8000B | 8M x 8bit CMOS Dynamic RAM with Fast Page Mode(8M x 8位CMOS 動(dòng)態(tài)RAM(帶快速頁模式)) |
| KM48C8104B | 8M x 8bit CMOS Dynamic RAM with Extended Data Out(8M x 8位CMOS 動(dòng)態(tài)RAM(帶擴(kuò)展數(shù)據(jù)輸出)) |
| KM48S16030A | 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
| KM48S16030B | 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM48C8004B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| KM48C8100AS-60 | 制造商:Samsung Semiconductor 功能描述: |
| KM48C8104B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8bit CMOS Dynamic RAM with Extended Data Out |
| KM-48F 50UA DC | 制造商:Fujita Electric 功能描述: |
| KM-48F 0-50MV DC | 制造商:Fujita Electric 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。