參數(shù)資料
型號(hào): KM44S16030B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4M x 4Bit x 4 Banks Synchronous DRAM(4M x 4位 x 4組同步動(dòng)態(tài)RAM)
中文描述: 4米× 4位× 4銀行同步DRAM(4米× 4位× 4組同步動(dòng)態(tài)RAM)的
文件頁數(shù): 13/43頁
文件大小: 625K
代理商: KM44S16030B
CMOS SDRAM
DEVICE OPERATIONS - III
ELECTRONICS
REV. 3 Feb. '98
BURST SEQUENCE (BURST LENGTH = 4)
Initial Address
A
1
Sequential
Interleave
A
0
0
0
1
1
0
1
0
1
0
1
2
3
1
2
3
0
2
3
0
1
3
0
1
2
0
1
2
3
1
0
3
2
2
3
0
1
3
2
1
0
BURST SEQUENCE (BURST LENGTH = 8)
Initial Address
A
1
Sequential
Interleave
0
0
0
0
1
1
1
1
0
1
0
1
0
1
0
1
0
1
2
3
4
5
6
7
2
3
4
5
6
7
0
1
4
5
6
7
0
1
2
3
6
7
0
1
2
3
4
5
A
0
A
2
0
0
1
1
0
0
1
1
1
2
3
4
5
6
7
0
3
4
5
6
7
0
1
2
5
6
7
0
1
2
3
4
7
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
2
3
0
1
6
7
4
5
4
5
6
7
0
1
2
3
6
7
4
5
2
3
0
1
1
0
3
2
5
4
7
6
3
2
1
0
7
6
5
4
5
4
7
6
1
0
3
2
7
6
5
4
3
2
1
0
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