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參數(shù)資料
| 型號(hào)： | KM44C1003D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode(1M x 4位CMOS四 CAS 動(dòng)態(tài)RAM(帶快速頁模式)) |
| 中文描述： | 100萬x 4位的CMOS DRAM與四中科院快速頁面模式（1米× 4位的CMOS四中科院動(dòng)態(tài)隨機(jī)存儲(chǔ)器（帶快速頁模式）） |
| 文件頁數(shù)： | 4/21頁 |
| 文件大小： | 388K |
| 代理商： | KM44C1003D |
KM44C1003D
CMOS DRAM
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one fast page mode cycle time,
t
PC
.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current (RAS and CAS cycling @
t
RC
=min.)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (CAS=V
IH
, RAS, Address cycling @
t
RC
=min.)
I
CC4
* : Fast Page Mode Current (RAS=V
IL
, CAS, Address cycling @
t
PC
=min.)
I
CC5
: Standby Current (RAS=CAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @
t
RC
=min)
Symbol
Power
Speed
Max
Units
KM44C1003D
I
CC1
Don
′
t Care
-5
-6
-7
85
75
65
mA
mA
mA
I
CC2
Don
′
t Care
Don
′
t Care
2
mA
I
CC3
Don
′
t Care
-5
-6
-7
85
75
65
mA
mA
mA
I
CC4
Don
′
t Care
-5
-6
-7
65
55
45
mA
mA
mA
I
CC5
Normal
L
Don
′
t Care
1
200
mA
uA
I
CC6
Don
′
t Care
-5
-6
-7
85
75
65
mA
mA
mA
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