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參數(shù)資料
| 型號： | KM432V515 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512K x 32Bit CMOS Quad CAS DRAM with EDO(512K x 32位CMOS四 CAS 動態(tài)RAM(帶EDO模式)) |
| 中文描述： | 為512k × 32Bit的中科院的CMOS四路DRAM與江戶（512k × 32的位的CMOS四中科院動態(tài)隨機(jī)存儲器（帶EDO公司模式）） |
| 文件頁數(shù)： | 3/21頁 |
| 文件大?。?/td> | 400K |
| 代理商： | KM432V515 |
CMOS DRAM
KM432V515
Preliminary
ABSOLUTE MAXIMUM RATINGS
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted
to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Parameter
Symbol
Rating
Units
3.3V
Voltage on any pin relative to V
SS
V
IN,
V
OUT
-0.5 to +4.6
V
Voltage on V
CC
supply relative to V
SS
V
CC
-0.5 to +4.6
V
Storage Temperature
Tstg
-55 to +150
°
C
Power Dissipation
P
D
1
W
Short Circuit Output Current
I
OS
Address
50
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to Vss, T
A
= 0 to 70
°
C
)
*1 : V
CC
+1.3V/15ns(3.3V), Pulse width is measured at V
CC
*2 : -1.3V/15ns(3.3V), Pulse width is measured at V
SS
Parameter
Symbol
3.3V
Units
Min
Typ
Max
Supply Voltage
V
CC
Inputs(8K
3.0
3.3
3.6
V
Ground
V
SS
Inputs(8K
0
0
0
V
Input High Voltage
V
IH
2.2
-
V
CC
+0.3
*1
0.8
V
Input Low Voltage
V
IL
-0.3
*2
-
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted.)
Parameter
Symbol
Min
Max
Units
Input Leakage Current (Any input 0
≤
V
IN
≤
V
IN
+0.3V,
all other input pins not under test=0 Volt)
I
I(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V
≤
V
OUT
≤
V
CC
)
I
O(L)
-5
5
uA
Output High Voltage Level(I
OH
=-2mA)
V
OH
2.4
-
V
Output Low Voltage Level(I
OL
=2mA)
V
OL
-
0.4
V
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