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參數(shù)資料
| 型號： | KM432D5131 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x 32Bit x 4 Banks Double Data Rate Synchronous Graphic RAM with Bi-directional Data Strobe(128K x 32位 x 4 組雙速率同步圖形RAM帶雙向數(shù)據(jù)選通) |
| 中文描述： | 128K的x 32Bit的× 4銀行雙數(shù)據(jù)速率同步圖形RAM的雙向數(shù)據(jù)選通（128K的× 32位× 4組雙速率同步圖形RAM的帶雙向數(shù)據(jù)選通） |
| 文件頁數(shù)： | 1/47頁 |
| 文件大?。?/td> | 912K |
| 代理商： | KM432D5131 |
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Target
16M DDR SGRAM
- 2 -
KM432D5131
Rev. 0.6 (Apr. 1998)
Revision History
Revision 0.6 (April 1998)
Changed the name of pin number 92 from N.C to VSSQ, pin number 93 from VSSQ to RFU in
PIN CONFIGURATION.
Revision 0.5 (February 1998)
Defined Maximum clock frequency up to 143MHz.
Corrected Feagures, Read Interrupted by Burst stop and a Write, Write Interrupted by a Read & DM, Write Interrupted by
a Precharge & DM in
BURST INTERRUPTION
.
Added tDSHZ(Last valid DQS to DQS Hi-Z(Postamble) @ Write) = 0.5tCK +/- 1ns in
AC CHARACTERISTICS
.
Added tSDQS(DQS Write Preamble setup time) = 0ns in
AC CHARACTERISTICS
.
Changed tRDL(tCDRL) from 1.5 tCKmin ~ 2 tCKmax to (2.5 tCK - tDQSS)min in
AC CHARACTERISTICS.
Changed tSLZ(tSHZ) from 1 tCK +/- 1ns to 1 tCK +/- 2ns in
AC CHARACTERISTICS.
Changed tDVQ(tDVQS) from 3.9ns to 3.3ns @ 100MHz in
AC CHARACTERISTICS.
Changed Ambient Temperature from TA=0 to 70
°
C to TA=0 to 65
°
C in
POWER & DC OPERATING CONDITIONS.
Changed Device Supply Voltage VDD from 3.15~3.45V to 3.135~3.465V in
POWER & DC OPERATING CONDITIONS.
Changed Output Supply Voltage VDDQ from 2.30~2.70V to 2.375~2.625V in
POWER & DC OPERATING CONDITIONS.
Changed Input Capacitance of Address Signal from 5pFmax to 4.5pFmax, Control Signal from 4pFmax to 5pFmax, I/O &
DM from 4pFmin to 3pFmin and from 6.5pFmax to 5.5pFmax in
CAPACITANCE.
Corrected
SIMPLIFIED STATE DIAGRAM
.
Corrected
TIMING DIAGRAM
.
Corrected
FUNCTION TRUTH TABLE.
Revision 0.4 (December 1997)
Initial Industry Release.
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PDF描述 |
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| KM432S2020B | 1M x 32Bit x 2 Banks Synchronous DRAM(1M x 32位 x 2 組同步動態(tài)RAM) |
| KM432S2030C | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| KM432S2030CT-F6 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| KM432S2030CT-F7 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| KM432S2030CT-F8 | 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM432D5131TQ-G8 | 制造商:Samsung Semiconductor 功能描述: |
| KM432J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:R. F. Molded Chokes |
| KM432S2030C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| KM432S2030CT-F10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| KM432S2030CT-F6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
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