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參數(shù)資料
| 型號： | KM418RD4D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| 中文描述： | 128/144Mbit RDRAM的256 × 16/18位× 2 * 16屬銀行直接RDRAMTM |
| 文件頁數(shù)： | 46/64頁 |
| 文件大?。?/td> | 4052K |
| 代理商： | KM418RD4D |
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Page 43
KM416RD8AC(D)/KM418RD8AC(D)
Direct RDRAM
Rev. 1.01 Oct. 1999
Current and Temperature Control
Figure 51 shows an example of a transaction which performs
current control calibration. It is necessary to perform this
operation once to every RDRAM in every t
CCTRL
interval in
order to keep the I
OL
output current in its proper range.
This example uses four COLX packets with a CAL
command. These cause the RDRAM to drive four calibra-
tion packets Q(a0) a time t
CAC
later. An offset of t
RDTOCC
must be placed between the Q(a0) packet and read data
Q(a1)from the same device. These calibration packets are
driven on the DQA4..3 and DQB4..3 wires. The TSQ bit of
the INIT register is driven on the DQA5 wire during same
interval as the calibration packets. The remaining DQA and
DQB wires are not used during these calibration packets.
The last COLX packet also contains a SAM command
(concatenated with the CAL command). The RDRAM
samples the last calibration packet and adjusts its I
OL
current
value.
Unlike REF commands, CAL and SAM commands cannot
be broadcast. This is because the calibration packets from
different devices would interfere. Therefore, a current
control transaction must be sent every t
CCTRL
/N, where N is
the number of RDRAMs on the Channel. The device field
Da of the address a0 in the CAL/SAM command should be
incremented after each transaction.
Figure 52 shows an example of a temperature calibration
sequence to the RDRAM. This sequence is broadcast once
every t
TEMP
interval to all the RDRAMs on the Channel.
The TCEN and TCAL are ROP commands, and cause the
slew rate of the output drivers to adjust for temperature drift.
During the quiet interval t
TCQUIET
the devices being cali-
brated can’t be read, but they can be written.
Figure 51: Current Control CAL/SAM Transaction Example
Figure 52: Temperature Calibration (TCEN-TCAL) Transactions to RDRAM
CTM/CFM
DQA8..0
DQB8..0
COL4
..COL0
ROW2
..ROW0
T
0
T
4
T
8
T
12
T
1
T
5
T
9
T
13
T
2
T
6
T
10
T
14
T
3
T
7
T
11
T
15
T
16
T
20
T
24
T
28
T
17
T
21
T
25
T
29
T
18
T
22
T
26
T
30
T
19
T
23
T
27
T
31
T
32
T
36
T
40
T
44
T
33
T
37
T
41
T
45
T
34
T
38
T
42
T
46
T
35
T
39
T
43
T
47
Transaction a0: CAL/SAM
Transaction a1: RD
Transaction a2: CAL/SAM
a0 = {Da, Bx}
a1 = {Da, Bx}
a2 = {Da, Bx}
CAL a0
CAL a2
Q (a0)
t
CAC
CAL a0
CAL a0
CAL/SAM a0
CAL b0
DQA5 of the first calibrate packet has the inverted TSQ bit of INIT
control register; i.e. logic 0 or high voltage means hot temperature.
When used for monitoring, it should be enabled with the DQA3
bit (current control one value) in case there is no RDRAM present:
HotTemp = DQA5DQA3
Note that DQB3 could be used instead of DQA3.
Q (a1)
t
READTOCC
Read data from the same
device from an earlier RD
command must be at this
packet position or earlier.
Read data from a different
device from an earlier RD
command can be anywhere
prior to the Q(a0) packet. .
Q (a1)
t
CCSAMTOREAD
Read data from a different
device from a later RD
command can be anywhere
after to the Q(a0) packet.
Read data from the same device
from a later RD command must
be at this packet position or
later.
t
CCTRL
CTM/CFM
DQA8..0
DQB8..0
COL4
..COL0
ROW2
..ROW0
T
0
T
4
T
8
T
12
T
1
T
5
T
9
T
13
T
2
T
6
T
10
T
14
T
3
T
7
T
11
T
15
T
16
T
20
T
24
T
28
T
17
T
21
T
25
T
29
T
18
T
22
T
26
T
30
T
19
T
23
T
27
T
31
T
32
T
36
T
40
T
44
T
33
T
37
T
41
T
45
T
34
T
38
T
42
T
46
T
35
T
39
T
43
T
47
t
TCEN
TCEN
TCAL
TCEN
No read data from devices
being calibrated
t
TCQUIET
t
TEMP
Any ROW packet may be placed
in the gap between the ROW
packets with the TCEN and
TCAL commands.
t
TCAL
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| KM418RD8AC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
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| KM418RD8AC(D)-RK70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM418RD8AC(D)-RK80 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM418RD8ACD-RK70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
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