參數(shù)資料
型號(hào)： KM418RD4D
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
中文描述： 128/144Mbit RDRAM的256 × 16/18位× 2 * 16屬銀行直接RDRAMTM
文件頁(yè)數(shù)： 23/64頁(yè)
文件大小： 4052K
代理商： KM418RD4D
Page 20
KM416RD8AC(D)/KM418RD8AC(D)
Direct RDRAM
Rev. 1.01 Oct. 1999
Read Transaction - Example
Figure 15 shows an example of a read transaction. It begins
by activating a bank with an ACT a0 command in an ROWA
packet. A time t
RCD
later a RD a1 command is issued in a
COLC packet. Note that the ACT command includes the
device, bank, and row address (abbreviated as a0) while the
RD command includes device, bank, and column address
(abbreviated as a1). A time t
CAC
after the RD command the
read data dualoct Q(a1) is returned by the device. Note that
the packets on the ROW and COL pins use the end of the
packet as a timing reference point, while the packets on the
DQA/DQB pins use the beginning of the packet as a timing
reference point.
A time t
CC
after the first COLC packet on the COL pins a
second is issued. It contains a RD a2 command. The a2
address has the same device and bank address as the a1
address (and a0 address), but a different column address. A
time t
CAC
after the second RD command a second read data
dualoct Q(a2) is returned by the device.
Next, a PRER a3 command is issued in an ROWR packet on
the ROW pins. This causes the bank to precharge so that a
different row may be activated in a subsequent transaction or
so that an adjacent bank may be activated. The a3 address
includes the same device and bank address as the a0, a1, and
a2 addresses. The PRER command must occur a time t
RAS
or more after the original ACT command (the activation
operation in any DRAM is destructive, and the contents of
the selected row must be restored from the two associated
sense amps of the bank during the t
RAS
interval). The PRER
command must also occur a time t
RDP
or more after the last
RD command. Note that the t
RDP
value shown is greater
than the t
RDP,MIN
specification in Table 22. This transaction
example reads two dualocts, but there is actually enough
time to read three dualocts before t
RDP
becomes the limiting
parameter rather than t
RAS
. If four dualocts were read, the
packet with PRER would need to shift right (be delayed) by
one t
CYCLE
(note - this case is not shown).
Finally, an ACT b0 command is issued in an ROWR packet
on the ROW pins. The second ACT command must occur a
time t
RC
or more after the first ACT command and a time t
RP
or more after the PRER command. This ensures that the
bank and its associated sense amps are precharged. This
example assumes that the second transaction has the same
device and bank address as the first transaction, but a
different row address. Transaction b may not be started until
transaction a has finished. However, transactions to other
banks or other devices may be issued during transaction a.
Figure 15: Read Transaction Example
CTM/CFM
DQA8..0
DQB8..0
COL4
..COL0
ROW2
..ROW0
T
0
T
4
T
8
T
12
T
1
T
5
T
9
T
13
T
2
T
6
T
10
T
14
T
3
T
7
T
11
T
15
T
16
T
20
T
24
T
28
T
17
T
21
T
25
T
29
T
18
T
22
T
26
T
30
T
19
T
23
T
27
T
31
T
32
T
36
T
40
T
44
T
33
T
37
T
41
T
45
T
34
T
38
T
42
T
46
T
35
T
39
T
43
T
47
RD a1
ACT a0
PRER a3
RD a2
Q (a2)
t
RCD
t
CAC
t
CC
Q (a1)
ACT b0
t
RAS
t
RC
t
RP
Transaction a: RD
Transaction b: xx
a0 = {Da,Ba,Ra}
b0 = {Da,Ba,Rb}
a1 = {Da,Ba,Ca1}
a2 = {Da,Ba,Ca2}
a3 = {Da,Ba}
t
CAC
t
RDP
相關(guān)PDF資料
PDF描述
KM416RD16AD CAP ELECT 47UF 100V TG SMD
KM416RD16C 15VPP 74DB 2 TERM CERAM BUZZER
KM416RD16D 15VPP 86DB 2 TERM CERAM BUZZER
KM416RD2AC 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD2AD 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM418RD8AC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM418RD8AC(D)-RG60 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM418RD8AC(D)-RK70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM418RD8AC(D)-RK80 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM418RD8ACD-RK70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*