參數(shù)資料
型號(hào)： KM418RD4D
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
中文描述： 128/144Mbit RDRAM的256 × 16/18位× 2 * 16屬銀行直接RDRAMTM
文件頁(yè)數(shù)： 32/64頁(yè)
文件大?。?/td> 4052K
代理商： KM418RD4D
Page 29
KM416RD8AC(D)/KM418RD8AC(D)
Direct RDRAM
Rev. 1.01 Oct. 1999
ο
3.13 Write CCA and CCB Register
- These registers
are written with a value halfway between their minimum
and maximum values. This shortens the time needed for
the RDRAMs to reach their steady-state current control
values in stage 5.0.
ο
3.14 Powerdown Exit
- The RDRAMs are in the PDN
power state at this point. A broadcast PDNExit command
is performed by the SIO block to place the RDRAMs in
the RLX (relax) power state in which they are ready to
receive ROW packets.
ο
3.15 SETF
- Each RDRAM is given a SETF command
through the SIO block. One of the operations performed
by this step is to generate a value for the AS (autoskip) bit
in the SKIP register and fix the RDRAM to a particular
read domain.
4.0 Controller Configuration
- This stage initializes the
controller block. Each step of this stage will set a field of the
ConfigRMC[63:0] bus to the appropriate value. Other
controller implementations will have similar initialization
requirements, and this stage may be used as a guide.
ο
4.1 Initial Read Data Offsets
- The configRMC bus is
written with a value which determines the time interval
between a COL packet with a memory read command and
the Q packet with the read data on the Channel. The value
written sets RMC.d1 to the minimum value permitted for
the system. This will be adjusted later in stage 6.0.
ο
4.2 Configure Row/Column Timing
- This step deter-
mines the values of the t
RAS,MIN
, t
RP,MIN
, t
RC,MIN
,
t
RCD,MIN
, t
RR,MIN
, and t
PP,MIN
RDRAM timing parame-
ters that are present in the system. The ConfigRMC bus is
written with values that will be compatible with all
RDRAM devices that are present.
ο
4.3 Set Refresh Interval
- This step determines the
values of the t
REF,MAX
RDRAM timing parameter that are
present in the system. The ConfigRMC bus is written with
a value that will be compatible with all RDRAM devices
that are present.
ο
4.4 Set Current Control Interval -
This step deter-
mines the values of the t
CCTRL,MAX
RDRAM timing
parameter that are present in the system. The ConfigRMC
bus is written with value that will be compatible with all
RDRAM devices that are present.
ο
4.5 Set Slew Rate Control Interval -
This step deter-
mines the values of the t
TEMP,MAX
RDRAM timing
parameter that are present in the system. The ConfigRMC
bus is written with a value that will be compatible with all
RDRAM devices that are present.
ο
4.6 Set Bank/Row/Col Address Bits -
This step deter-
mines the number of RDRAM bank, row, and column
address bits that are present in the system. It also deter-
mines the RDRAM core types (independent, doubled, or
split) that are present. The ConfigRMC bus is written with
a value that will be compatible with all RDRAM devices
that are present.
5.0 RDRAM Current Control -
This step causes the INIT
block to generate a sequence of pulses which performs
RDRAM maintenance operations.
6.0 RDRAM Core, Read Domain Initialization -
This
stage completes the RDRAM initialization
ο
6.1 RDRAM Core Initialization
- A sequence of 192
memory refresh transactions is performed in order to place
the cores of all RDRAMs into the proper operating state.
ο
6.2 RDRAM Read Domain Initialization -
A memory
write and memory read transaction is performed to each
RDRAM to determine which read domain each RDRAM
occupies. The programmed delay of each RDRAM is then
adjusted so the total RDRAM read delay (propagation
delay plus programmed delay) is constant. The TPARM
and TCDLYI registers of each RDRAM are rewritten with
the appropriate read delay values. The ConfigRMC bus is
also rewritten with an updated value.
7.0 Other RDRAM Register Fields -
This stage rewrites
the INIT register with the final values of the LSR,NSR, and
PSR fields.
In essence, the controller must read all the read-only config-
uration registers of all RDRAMs (or it must read the SPD
device present on each RIMM), it must process this informa-
tion, and then it must write all the read-write registers to
place the RDRAMs into the proper operating mode.
Initialization Note [1]: During the initialization process, it is
necessary for the controller to perform 128 current control
operations (3xCAL, 1xCAL/SAM) and one temperature
calibrate operation (TCEN/TCAL) after reset or after power-
down (PDN)exit.
Initialization Note [2]: There are two classes of 64/72Mbit
RDRAM . They are distinguished by the
“
S28IECO
”
bit in
the SPD. The behavior of the RDRAM at initialization is
slightly different for the two types:
S28IECO=0: Upon powerup the device enters ATTN state.
The serial operations SETR, CLRR and SETF are performed
without requiring a SDEVID match of the SBC bit (broad-
cast) to be set.
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參數(shù)描述
KM418RD8AC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
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KM418RD8AC(D)-RK70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM418RD8AC(D)-RK80 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM418RD8ACD-RK70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
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