參數(shù)資料
型號(hào)： KM418RD2AD
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
中文描述： 128/144Mbit RDRAM的256 × 16/18位× 2 * 16屬銀行直接RDRAMTM
文件頁(yè)數(shù)： 35/64頁(yè)
文件大?。?/td> 4052K
代理商： KM418RD2AD
Page 32
KM416RD8AC(D)/KM418RD8AC(D)
Direct RDRAM
Rev. 1.01 Oct. 1999
Figure 27: INIT Register
Figure 28: CNFGA Register
15 14 13 12 11 10
SDE
5
9
8
7
6
5
4
3
2
1
0
TSQ
DIS
TEN LSR
NSR
PSR
SRP PSX
Control Register: INIT
Read/write register.
Reset values are undefined except as affected by SIO Reset as noted
below. SETR/CLRR Reset does not affect this register.
SDEVID5..0 - Serial Device Identification. Compared to SDEV5..0
serial address field of serial request packet for register read/write transac-
tions. This determines which RDRAM is selected for the register read or
write operation.
SDEVID resets to 3f
16
.
0
0
PSX - Power Exit Select. PDN and NAP are exited with (=0) or without (=1) a device address on the
DQA5..0 pins. PDEV5 (on DQA5) selectes broadcast (1) or directed (0) exit. For a directed exit,
PDEV4..0 (on DQA4..0) is compared to DEVID4..0 to select a device.
SRP - SIO Repeater. Controls value on SIO1; SIO1=SIO0 if SRP=1, SIO1=1 if SRP=0.
SRP resets
to 1.
NAP Self-Refresh. NSR=1 enables self-refresh in NAP mode. NSR can’t be set while in NAP mode.
NSR resets to 0.
PDN Self-Refresh. PSR=1 enables self-refresh in PDN mode. PSR can’t be set while in PDN mode.
PSR resets to 0.
Low Power Self-Refresh. LSR=1 enables longer self-refresh interval. The self-refresh supply
current is reduced.
LSR resets to 0.
Temperature Sensing Enable. TEN=1 enables temperature sensing circuitry, permitting the TSQ bit
to be read to determine if a thermal trip point has been exceeded.
TEN resets to 0.
Temperature Sensing Output. TSQ=1 when a temperature trip point has been exceeded, TSQ=0
when it has not. TSQ is available during a current control operation (see Figure 51).
RDRAM Disable. DIS=1 causes RDRAM to ignore NAP/PDN exit sequence, DIS=0 permits
Address: 021
16
SDEVID4..SDEVID0
15 14 13 12 11 10
PVER5..0
= 000001
9
8
7
6
5
4
3
2
REFBIT2..0
= 101
1
0
DBL
1
MVER5..0
= 010000
Control Register: CNFGA
Address: 023
16
Read-only register.
REFBIT2..0 - Refresh Bank Bits. Specifies the number of
bank address bits used by REFA and REFP commands.
Permits multi-bank refresh in future RDRAMs.
DBL - Doubled-Bank. DBL=1 means the device uses a
doubled-bank architecture with adjacent-bank dependency.
DBL=0 means no dependency.
MVER5..0 - Manufacturer Version. Specifies the manufac-
turer identification number.
PVER5..0 - Protocol Version. Specifies the Direct Protocol
version used by this device:
0 - Compliant with version 0.62.
1 - Compliant with version 0.7 through this version.
2 to 63 - Reserved.
Note: In RDRAMs with protocol version 1 PVER[5:0] = 000001, the
range of the PDNX field (PDNX[2:0] in the PDNX register) may not
be large enough to specify the location of the restricted interval in
Figure 47. In this case, the effective t
parameter must increase and
no row or column packets may overlap the restricted interval. See
Figure 47 and Table 19.
相關(guān)PDF資料
PDF描述
KM418RD2C 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM418RD2D 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM418RD32AC 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM418RD32AD 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM418RD32C 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM418RD2C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM418RD2D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM418RD32AC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM418RD32AD 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM418RD32C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
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