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參數(shù)資料
| 型號(hào)： | KM418RD2AD |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| 中文描述： | 128/144Mbit RDRAM的256 × 16/18位× 2 * 16屬銀行直接RDRAMTM |
| 文件頁數(shù)： | 34/64頁 |
| 文件大小： | 4052K |
| 代理商： | KM418RD2AD |
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Page 31
KM416RD8AC(D)/KM418RD8AC(D)
Direct RDRAM
Rev. 1.01 Oct. 1999
. .
045
16
NAPX
NAPXA
read-write, 5 bits
NAP exit. Specifies length of NAP exit phase A.
NAPX
read-write, 5 bits
NAP exit. Specifies length of NAP exit phase A + phase B.
DQS
read-write, 1 bits
DQ select. Selects CMD framing for NAP/PDN exit.
046
16
PDNXA
PDNXA
read-write, 13 bits
PDN exit. Specifies length of PDN exit phase A.
047
16
PDNX
PDNX
read-write, 13 bits
PDN exit. Specifies length of PDN exit phase A + phase B.
048
16
TPARM
TCAS
read-write, 2 bits
t
CAS-C
core parameter. Determines t
OFFP
datasheet parameter.
TCLS
read-write, 2 bits
t
CLS-C
core parameter. Determines t
CAC
and t
OFFP
parameters.
TCDLY0
read-write, 3 bits
t
CDLY0-C
core parameter. Programmable delay for read data.
049
16
TFRM
TFRM
read-write, 4 bits
t
FRM-C
core parameter. Determines ROW-COL packet framing interval.
04a
16
TCDLY1
TCDLY1
read-write, 3 bits
t
CDLY1-C
core parameter. Programmable delay for read data.
04b
16
SKIP
AS
read, 1 bit
Auto Skip value established by the SETF command.
MSE
read-write, 1 bit
Manual Skip Enable. Allows the MS value to override the AS value.
MS
read-write, 1 bit
Manual Skip value.
04c
16
TCYCLE
TCYCLE
read-write, 14 bits
t
CYCLE
datasheet parameter. Specifies cycle time in 64ps units.
04d
16
TEST77
TEST77
read-write, 16 bits
Test register. Write with zero after SIO reset.
04e
16
TEST78
TEST78
read-write, 16 bits
Test register. Do not read or write after SIO reset.
04f
16
TEST79
TEST79
read-write, 16 bits
Test register. Do not read or write after SIO reset.
080
16
- 0ff
16
reserved
reserved
vendor-specific
Vendor-specific test registers. Do not read or write after SIO reset.
Table 16: Control Register Summary
SA11..SA0
Register
Field
read-write/ read-only
Description
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM418RD2C | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM418RD2D | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM418RD32AC | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM418RD32AD | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM418RD32C | 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM418RD2C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM418RD2D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM418RD32AC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM418RD32AD | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| KM418RD32C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
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