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參數(shù)資料
| 型號： | KM416V256D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| 中文描述： | 256 × 16Bit的CMOS動態(tài)RAM的快速頁面模式 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 83K |
| 代理商： | KM416V256D |
KM416C256D, KM416V256D
CMOS DRAM
CAPACITANCE
(T
A
=25
é
, V
CC
=5V or 3.3V, f=1MHz)
Parameter
Symbol
Min
Max
Units
Input capacitance [A0 ~ A8]
C
IN1
-
5
pF
Input capacitance [RAS, UCAS, LCAS, W, OE]
C
IN2
-
7
pF
Output capacitance [DQ0 - DQ15]
C
DQ
-
7
pF
Test condition (5V device) : V
CC
=5.0V
10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V
Test condition (3.3V device) : V
CC
=3.3V
0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-5
-6
-7
Units
Notes
Min
Max
Min
Max
Min
Max
Random read or write cycle time
t
RC
90
110
130
ns
Read-modify-write cycle time
t
RWC
t
RAC
132
152
177
ns
Access time from RAS
50
60
70
ns
3,4,10
Access time from CAS
t
CAC
t
AA
15
15
20
ns
3,4,5
Access time from column address
25
30
35
ns
3,10
CAS to output in Low-Z
t
CLZ
t
OFF
0
0
0
ns
3
Output buffer turn-off delay
0
12
0
12
0
17
ns
6
Transition time (rise and fall)
t
T
t
RP
3
50
3
50
3
50
ns
2
RAS precharge time
30
40
50
ns
RAS pulse width
t
RAS
t
RSH
50
10K
60
10K
70
10K
ns
RAS hold time
15
15
20
ns
CAS hold time
t
CSH
t
CAS
50
60
70
ns
CAS pulse width
15
10K
15
10K
20
10K
ns
RAS to CAS delay time
t
RCD
t
RAD
20
35
20
45
20
50
ns
4
RAS to column address delay time
15
25
15
30
15
35
ns
10
CAS to RAS precharge time
t
CRP
t
ASR
5
5
5
ns
Row address set-up time
0
0
0
ns
Row address hold time
t
RAH
t
ASC
10
10
10
ns
Column address set-up time
0
0
0
ns
12
Column address hold time
t
CAH
t
RAL
10
10
15
ns
12
Column address to RAS lead time
25
30
35
ns
Read command set-up time
t
RCS
t
RCH
0
0
0
ns
Read command hold time referenced to CAS
0
0
0
ns
8
Read command hold time referenced to RAS
t
RRH
t
WCS
0
0
0
ns
8
Write command set-up time
0
0
0
ns
7
Write command hold time
t
WCH
WP
10
10
15
ns
Write command pulse width
10
10
15
ns
Write command to RAS lead time
t
RWL
t
CWL
15
15
15
ns
Write command to CAS lead time
13
15
15
ns
15
AC CHARACTERISTICS
(0
é
T
A
70
é
, See note 1,2)
*1
Note)
*1 :
5V only
相關PDF資料 |
PDF描述 |
|---|---|
| KM416C4000C | RESISTOR |
| KM416C4100C | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C4004C | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| KM416C4104C | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| KM416C4100B | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| KM416V256DT-L6 | 制造商:Samsung Electro-Mechanics 功能描述:Dynamic RAM, Fast Page, 256K x 16, 44 Pin, Plastic, TSOP |
| KM416V4000B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| KM416V4000C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| KM416V4004B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| KM416V4004C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
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