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參數(shù)資料
| 型號(hào)： | KM416V256D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode |
| 中文描述： | 256 × 16Bit的CMOS動(dòng)態(tài)RAM的快速頁面模式 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 83K |
| 代理商： | KM416V256D |
KM416C256D, KM416V256D
CMOS DRAM
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
, I
CC6
and I
CC7,
address can be changed maximum once while RAS=V
IL
. In
I
CC4
, address can be changed maximum once within one fast page mode cycle time, tPC.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current (RAS and UCAS, LCAS, Address cycling @tRC=min.)
I
CC2
: Standby Current (RAS=UCAS=LCAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (UCAS=LCAS=V
IH
, RAS, Address cycling @tRC=min.)
I
CC4
* : Fast Page Mode Current (RAS=V
IL
, UCAS or LCAS, Address cycling @tPC=min.)
I
CC5
: Standby Current (RAS=UCAS=LCAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @tRC=min.)
I
CC7
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V, UCAS, LCAS=0.2V,
Din=Don't care, T
RC
=125us, T
RAS
=T
RAS
min~300ns
I
CCS
: Self Refresh Current
RAS=UCAS=LCAS=V
IL
, W=OE=A0 ~ A8=V
CC
-0.2V or 0.2V,
DQ0 ~ DQ15=V
CC
-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
KM416V254D
KM416C254D
I
CC1
Don't care
-5
-6
-7
-
90
80
1
110
90
80
2
mA
mA
mA
mA
I
CC2
Don't care
Don't care
I
CC3
Don't care
-5
-6
-7
-5
-6
-7
-
90
80
-
60
55
0.5
100
110
90
80
70
60
55
1
150
mA
mA
mA
mA
mA
mA
mA
uA
I
CC4
Don't care
I
CC5
Normal
L
Don't care
I
CC6
Don't care
-5
-6
-7
-
90
80
200
110
90
80
300
mA
mA
mA
uA
I
CC7
L
Don't care
I
CCS
L
Don't care
100
200
uA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM416C4000C | RESISTOR |
| KM416C4100C | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C4004C | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| KM416C4104C | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| KM416C4100B | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416V256DT-L6 | 制造商:Samsung Electro-Mechanics 功能描述:Dynamic RAM, Fast Page, 256K x 16, 44 Pin, Plastic, TSOP |
| KM416V4000B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| KM416V4000C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| KM416V4004B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| KM416V4004C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
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