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參數(shù)資料
| 型號(hào)： | KM416C4000C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | RESISTOR |
| 中文描述： | 4米× 16位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器的快速頁(yè)面模式 |
| 文件頁(yè)數(shù)： | 1/35頁(yè) |
| 文件大?。?/td> | 901K |
| 代理商： | KM416C4000C |
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KM416C4000C,
KM416C4100C
CMOS DRAM
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time ( -5 or -6) are optional features of this family. All of this family
have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 Fast Page Mode DRAM family is fabri-
cated using Samsung
′
s advanced CMOS process to realize high band-width, low power consumption and high reliability.
Part Identification
- KM416C4000C(5.0V, 8K Ref.)
- KM416C4100C(5.0V, 4K Ref.)
Fast Page Mode operation
2CAS Byte/Word Read/Write operation
CAS-before-RAS refresh capability
RAS-only and Hidden refresh capability
Fast parallel test mode capability
TTL(5.0V) compatible inputs and outputs
Early Write or output enable controlled write
JEDEC Standard pinout
Available in Plastic TSOP(II) package
+5.0V
±
10% power supply
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
FEATURES
Refresh Cycles
Part
NO.
Refresh
cycle
Refresh time
Normal
KM416C4000C*
KM416C4100C
8K
4K
64ms
Performance Range
Speed
-5
-6
t
RAC
50ns
60ns
t
CAC
13ns
15ns
t
RC
90ns
110ns
t
PC
35ns
40ns
Active Power Dissipation
Speed
-5
-6
8K
495
440
4K
660
605
Unit : mW
Control
Clocks
Lower
Data out
Buffer
RAS
UCAS
LCAS
W
Vcc
Vss
DQ0
to
DQ7
A0~A12
(A0~A11)*1
A0~A8
(A0~A9)*1
Memory Array
4,194,304 x 16
Cells
FUNCTIONAL BLOCK DIAGRAM
Note) *1 : 4K Refresh
S
Upper
Data in
Buffer
Upper
Data out
Buffer
Lower
Data in
Buffer
DQ
8
to
DQ15
OE
* Access mode & RAS only refresh mode
: 8K cycle/64ms
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms
Row Decoder
Column Decoder
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM416C4100C | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C4004C | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| KM416C4104C | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| KM416C4100B | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| KM416RD16AC | CAP ELECT 330UF 100V TG SMD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416C4004C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| KM416C4100B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C4100BS-6 | 制造商:Samsung Semiconductor 功能描述: 制造商:Samsung Electro-Mechanics 功能描述:4M X 16 FAST PAGE DRAM, 60 ns, 50 Pin Plastic SMT |
| KM416C4100C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C4104C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
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