參數(shù)資料
型號: KM416C4000C
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: RESISTOR
中文描述: 4米× 16位的CMOS動態(tài)隨機(jī)存儲器的快速頁面模式
文件頁數(shù): 7/35頁
文件大小: 901K
代理商: KM416C4000C
KM416C4000C,
KM416C4100C
CMOS DRAM
TEST MODE CYCLE
Parameter
Symbol
-5
-6
Units
Note
Min
Max
Min
Max
Random read or write cycle time
t
RC
95
115
ns
Read-modify-write cycle time
t
RWC
138
160
ns
Access time from RAS
t
RAC
55
65
ns
3,4,10,12
Access time from CAS
t
CAC
18
20
ns
3,4,5,12
Access time from column address
t
AA
30
35
ns
3,10,12
RAS pulse width
t
RAS
55
10K
65
10K
ns
CAS pulse width
t
CAS
18
10K
20
10K
ns
RAS hold time
t
RSH
18
20
ns
CAS hold time
t
CSH
55
65
ns
Column Address to RAS lead time
t
RAL
30
35
ns
CAS to W delay time
t
CWD
41
43
ns
7
RAS to W delay time
t
RWD
78
88
ns
7
Column Address to W delay time
t
AWD
53
58
ns
7
Fast Page mode cycle time
t
PC
40
45
ns
Fast Page mode read-modify-write cycle time
t
PRWC
81
90
ns
RAS pulse width (Fast Page cycle)
t
RASP
55
200K
65
200K
ns
Access time from CAS precharge
t
CPA
35
40
ns
3
OE access time
t
OEA
18
20
ns
OE to data delay
t
OED
18
18
ns
OE command hold time
t
OEH
18
20
ns
( Note 11 )
相關(guān)PDF資料
PDF描述
KM416C4100C 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
KM416C4004C 4M x 16bit CMOS Dynamic RAM with Extended Data Out
KM416C4104C 4M x 16bit CMOS Dynamic RAM with Extended Data Out
KM416C4100B 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
KM416RD16AC CAP ELECT 330UF 100V TG SMD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM416C4004C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out
KM416C4100B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode
KM416C4100BS-6 制造商:Samsung Semiconductor 功能描述: 制造商:Samsung Electro-Mechanics 功能描述:4M X 16 FAST PAGE DRAM, 60 ns, 50 Pin Plastic SMT
KM416C4100C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode
KM416C4104C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out