- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373156 > KM416S4031C (SAMSUNG SEMICONDUCTOR CO. LTD.) 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface(1M x 16位 x4組同步動(dòng)態(tài)RAM（帶SSTL接口）) PDF資料下載
參數(shù)資料
| 型號： | KM416S4031C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface(1M x 16位 x4組同步動(dòng)態(tài)RAM（帶SSTL接口）) |
| 中文描述： | 100萬× 16 × 4銀行同步DRAM接口與薩里衛(wèi)星技術(shù)有限公司（100萬× 16位x4組同步動(dòng)態(tài)隨機(jī)存儲器（帶SSTL公司接口）） |
| 文件頁數(shù)： | 6/8頁 |
| 文件大小： | 62K |
| 代理商： | KM416S4031C |
KM416S4031C
CMOS SDRAM
REV. 0 April 1998
Preliminary
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
Parameter
Symbol
-7
-S
-8
Unit
Note
Min
Max
Min
Max
Min
Max
CLK cycle time
CAS latency=3
t
CC
7
1000
-
1000
8
1000
ns
1
CAS latency=2
12
10
13
CLK to valid
output delay
CAS latency=3
t
SAC
5.5
-
6
ns
1, 2
CAS latency=2
7
6
8
Output data hold time
t
OH
2.5
2
2.5
ns
2
CLK high pulse width
t
CH
3
3.5
3
ns
3
CLK low pulse width
t
CL
3
3.5
3
ns
3
Input setup time
t
SS
2
2
2.5
ns
3
Input hold time
t
SH
1
1
1
ns
3
CLK to output in Low-Z
t
SLZ
1
1
1
ns
2
CLK to output
in Hi-Z
CAS latency=3
t
SHZ
5.5
-
6
ns
CAS latency=2
7
8
8
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Notes :
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM416S8030BN | 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| KM416S8030B | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| KM416S8030 | 2M x 16Bit x 4 Banks Synchronous DRAM |
| KM416V1004A | 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
| KM416V1004A-6 | 1M x 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416S8030 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 16Bit x 4 Banks Synchronous DRAM |
| KM416S8030B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| KM416S8030BN | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| KM416S8030BN-G/FH | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
| KM416S8030BN-G/FL | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。