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參數(shù)資料
| 型號(hào)： | KM416C4004C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| 中文描述： | 4米× 16位的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器的擴(kuò)展數(shù)據(jù)輸出 |
| 文件頁(yè)數(shù)： | 6/36頁(yè) |
| 文件大?。?/td> | 946K |
| 代理商： | KM416C4004C |
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KM416C4004C,
KM416C4104C
CMOS DRAM
AC CHARACTERISTICS
(Continued)
Parameter
Symbol
-5
-6
Units
Note
Min
Max
Min
Max
Data hold time
t
DH
t
REF
t
REF
t
WCS
t
CWD
t
RWD
t
AWD
t
CSR
t
CHR
t
RPC
t
CPA
t
HPC
t
HPRWC
t
CP
t
RASP
t
RHCP
t
OEA
t
OED
t
CPWD
t
OEZ
t
OEH
t
WTS
t
WTH
t
WRP
t
WRH
t
DOH
t
REZ
t
WEZ
t
WED
t
OCH
t
CHO
t
OEP
t
WPE
t
RASS
t
RPS
t
CHS
8
10
ns
9,19
Refresh period (4K, Normal)
64
64
ms
Refresh period (8K, Normal)
64
64
ms
Write command set-up time
0
0
ns
7
CAS to W delay time
30
32
ns
7,15
RAS to W delay time
67
77
ns
7
Column address W delay time
42
47
ns
7
CAS set-up time (CAS -before-RAS refresh)
5
5
ns
17
CAS hold time (CAS -before-RAS refresh)
10
10
ns
18
RAS to CAS precharge time
5
5
ns
Access time from CAS precharge
28
35
ns
3
Hyper Page cycle time
20
25
ns
20
Hyper Page read-modify-write cycle time
47
56
ns
20
CAS precharge time (Hyper page cycle)
8
10
ns
14
RAS pulse width (Hyper page cycle)
50
200K
60
200K
ns
RAS hold time from CAS precharge
30
35
ns
OE access time
13
15
ns
OE to data delay
13
13
ns
CAS precharge to W delay time
45
54
ns
Output buffer turn off delay time from OE
3
13
3
13
ns
6
OE command hold time
13
15
ns
Write command set-up time (Test mode in)
10
10
ns
11
Write command hold time (Test mode in)
10
10
ns
11
W to RAS precharge time (C-B-R refresh)
10
10
ns
W to RAS hold time (C-B-R refresh)
10
10
ns
Output data hold time
5
5
ns
Output buffer turn off delay from RAS
3
13
3
13
ns
6,21
Output buffer turn off delay from W
3
13
3
13
ns
6
W to data delay
15
15
ns
OE to CAS hold time
5
5
ns
CAS hold time to OE
5
5
ns
OE precharge time
5
5
ns
W pulse width (Hyper page cycle)
5
5
ns
RAS pulse width (C-B-R self refresh)
100
100
us
22,23,24
RAS precharge time (C-B-R self refresh)
90
110
ns
22,23,24
CAS hold time (C-B-R self refresh)
-50
-50
ns
22,23,24
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PDF描述 |
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| KM416C4104C | 4M x 16bit CMOS Dynamic RAM with Extended Data Out |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM416C4100B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C4100BS-6 | 制造商:Samsung Semiconductor 功能描述: 制造商:Samsung Electro-Mechanics 功能描述:4M X 16 FAST PAGE DRAM, 60 ns, 50 Pin Plastic SMT |
| KM416C4100C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| KM416C4104C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16bit CMOS Dynamic RAM with Extended Data Out |
| KM4-16L-10PN | 制造商:Amphenol Corporation 功能描述:KM AUSTRALIAN PRODUCT - Bulk |
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