參數(shù)資料
型號: KM416C4004C
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4M x 16bit CMOS Dynamic RAM with Extended Data Out
中文描述: 4米× 16位的CMOS動態(tài)隨機(jī)存儲器的擴(kuò)展數(shù)據(jù)輸出
文件頁數(shù): 4/36頁
文件大?。?/td> 946K
代理商: KM416C4004C
KM416C4004C,
KM416C4104C
CMOS DRAM
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle time
t
HPC
.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current (RAS and UCAS, LCAS, Address cycling @
t
RC
=min.)
I
CC2
: Standby Current (RAS=UCAS=LCAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (UCAS=LCAS=V
IH
, RAS, Address cycling @
t
RC
=min.)
I
CC4
* : Extended Data Out Mode Current (RAS=V
IL
, UCAS or LCAS, Address cycling @
t
HPC
=min.)
I
CC5
: Standby Current (RAS=UCAS=LCAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @
t
RC
=min)
Symbol
Power
Speed
Max
Units
KM416C4004C
KM416C4104C
I
CC1
Don
t care
-5
-6
90
80
120
110
mA
mA
I
CC2
Normal
Don
t care
2
2
mA
I
CC3
Don
t care
-5
-6
90
80
120
110
mA
mA
I
CC4
Don
t care
-5
-6
100
90
110
100
mA
mA
I
CC5
Normal
Don
t care
1
1
mA
I
CC6
Don
t care
-5
-6
120
110
120
110
mA
mA
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