- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄374352 > KM29V040T (SAMSUNG SEMICONDUCTOR CO. LTD.) 512K x 8 Bit NAND Flash Memory(512K x 8位 NAND閃速存儲(chǔ)器) PDF資料下載
參數(shù)資料
| 型號(hào)： | KM29V040T |
| 廠(chǎng)商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512K x 8 Bit NAND Flash Memory(512K x 8位 NAND閃速存儲(chǔ)器) |
| 中文描述： | 為512k × 8位NAND閃存（為512k × 8位的NAND閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 9/21頁(yè) |
| 文件大小： | 223K |
| 代理商： | KM29V040T |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)當(dāng)前第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)
KM29V040T, KM29V040IT
FLASH MEMORY
9
Identifying Invalid Block(s) in the KM29V040
INVALID BLOCKS
The KM29V040 Flash device may or may not contain up to 3 invalid blocks. Invalid blocks are defined as blocks that contain one o r
more invalid bits. Typically, an invalid block will contain a single bad bit. Devices with invalid block(s) have the same qualit y levels as
devices with all valid blocks and have the same AC and DC characteristics. An invalid block(s) does not affect the performance o f
valid block(s) because it is isolated from the bit line and the common source line by a select transistor. The system design mus t be
able to mask out the invalid block(s) via address mapping. The 1st block of the KM29V040, however, is fully guaranteed to be a g ood
block.
KM29V040 Technical Notes
All device locations are erased(FFh) prior to shipping. Device with invalid Block(s) will be randomly written with 00h data with in the
first or second page in the invalid Block(s). This page may or may not contain the invalid cell(s). The 00h data just marks the block(s)
that contains the invalid cell(s). A system that can utilize these devices must be able to recognize invalid block(s) via the fo llowing
suggested flow chart
(Figure 1).
Figure 1. Flow chart to create invalid block table.
Start
Set : Block = 0
Check "FF"
Set : Block n + 1
Block = 127
End
Create (or update)
invalid block(s) Table
No
No
Yes
Yes
*
For the 1st frame of 1st page
*
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM29V16000AIT | FLASH MEMORY |
| KM29V16000ARS | 2M X 8 BIT NAN FLASH MEMORY |
| KM29V16000AR | 2M X 8 BIT NAND FLASH MEMORY |
| KM29V16000ATS | 2M x 8 Bit NAND Flash Memory(2M x 8位 NAND 閃速存儲(chǔ)器) |
| KM29V16000AT | 2M x 8 Bit NAND Flash Memory(2M x 8位 NAND閃速存儲(chǔ)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM29V16000AIT | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY |
| KM29V16000AR | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M X 8 BIT NAND FLASH MEMORY |
| KM29V16000ARS | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M X 8 BIT NAN FLASH MEMORY |
| KM29V16000AT | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY |
| KM29V16000ATS | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。