參數(shù)資料
型號(hào)： KM29V040T
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512K x 8 Bit NAND Flash Memory(512K x 8位 NAND閃速存儲(chǔ)器)
中文描述： 為512k × 8位NAND閃存（為512k × 8位的NAND閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 2/21頁(yè)
文件大?。?/td> 223K
代理商： KM29V040T
KM29V040T, KM29V040IT
FLASH MEMORY
2
512K x 8 Bit NAND Flash Memory
The KM29V040 is a 512Kx8bit NAND Flash Memory. Its NAND
cell structure provides the most cost-effective solution for Digi-
tal Audio Recording. A Program operation programs a 32-byte
frame in typically 500
μ
s and an Erase operation erase a 4K-
byte block in typically 6ms. Data in a frame can be read out at a
burst cycle rate of 120ns/byte. The I/O pins serve as the ports
for address and data input/output as well as for command
inputs. The on-chip write controller automates the program and
erase operations, including program or erase pulse repetition
where required, and performs internal verification of cell data.
The KM29V040 is an optimum solution for flash memory appli-
cation that do not require the high performance levels or capac-
ity of larger density flash memories. These application include
data storage in digital Telephone Answering Devices(TAD) and
other consumer applications that require voice data storage.
GENERAL DESCRIPTION
FEATURES
Single 3.3 - volt Power Supply
Organization
- Memory Cell Array : 512K x 8
- Data Register : 32 x 8 bit
Automatic Program and Erase (Typical)
- Frame Program : 32 Byte in 500
μ
s
- Block Erase : 4K Byte in 6ms
32-Byte Frame Read Operation
- Random Access : 15
μ
s(Max.)
- Serial Frame Access : 120ns(Min.)
Command/Address/Data Multiplexed I/O port
Low Operation Current (Typical)
- 10
μ
A Standby Current
- 10mA Read/ Program/Erase Current
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)
PIN CONFIGURATION
VSS
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
I/O0
I/O1
I/O2
I/O3
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
VCC
I/O4
I/O5
I/O6
I/O7
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
GND
R/B
RE
CE
VCC
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
44(40) TSOP (II)
NOTE
: Connect all V
CC
and V
SS
pins of each device to common power supply outputs.
Do not leave V
CC,
V
SS
or GND inputs disconnected.
PIN DESCRIPTION
Pin Name
Pin Function
I/O
0
~ I/O
7
Data Inputs/Outputs
CLE
Command Latch Enable
ALE
Address Latch Enable
CE
Chip Enable
RE
Read Enable
WE
Write Enable
WP
Write Protect
GND
Ground Input
R/B
Ready/Busy output
V
CC
Power
V
SS
Ground
N.C
No Connection
相關(guān)PDF資料
PDF描述
KM29V16000AIT FLASH MEMORY
KM29V16000ARS 2M X 8 BIT NAN FLASH MEMORY
KM29V16000AR 2M X 8 BIT NAND FLASH MEMORY
KM29V16000ATS 2M x 8 Bit NAND Flash Memory(2M x 8位 NAND 閃速存儲(chǔ)器)
KM29V16000AT 2M x 8 Bit NAND Flash Memory(2M x 8位 NAND閃速存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM29V16000AIT 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KM29V16000AR 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M X 8 BIT NAND FLASH MEMORY
KM29V16000ARS 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M X 8 BIT NAN FLASH MEMORY
KM29V16000AT 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KM29V16000ATS 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
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