參數(shù)資料
型號(hào)： KM29U64000IT
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 8M x 8 Bit NAND Flash Memory
中文描述： 8米× 8位NAND閃存
文件頁(yè)數(shù)： 2/26頁(yè)
文件大小： 481K
代理商： KM29U64000IT
KM29U64000T, KM29U64000IT
FLASH MEMORY
2
8M x 8 Bit NAND Flash Memory
The KM29U64000 is a 8M(8,388,608)x8bit NAND Flash Mem-
ory with a spare 256K(262,144)x8bit. Its NAND cell provides the
most cost-effective solution for the solid state mass storage
market. A program operation programs the 528-byte page in
typically 200
μ
s and an erase operation can be performed in typ-
ically 2ms on an 8K-byte block. Data in the page can be read
out at 50ns cycle time per byte. The I/O pins serve as the ports
for address and data input/output as well as command inputs.
The on-chip write controller automates all program and erase
functions including pulse repetition, where required, and inter-
nal verify and margining of data. Even the write-intensive sys-
tems can take advantage of the KM29U64000
′
s extended
reliability of 1,000,000 program/erase cycles by providing either
ECC(Error Correcting Code) or real time mapping-out algo-
rithm. These algorithms have been implemented in many mass
storage applications and also the spare 16 bytes of a page
combined with the other 512 bytes can be utilized by system-
level ECC.
The KM29U64000 is an optimum solution for large nonvolatile
storage applications such as solid state file storage, digital
voice recorder, digital still camera and other portable applica-
tions requiring non-volatility.
GENERAL DESCRIPTION
FEATURES
Voltage Supply : 2.7V ~ 3.6V
Organization
- Memory Cell Array : (8M + 256K)bit x 8bit
- Data Register : (512 + 16)bit x8bit
Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (8K + 256)Byte
528-Byte Page Read Operation
- Random Access : 7
μ
s(Max.)
- Serial Page Access : 50ns(Min.)
Fast Write Cycle Time
- Program time : 200
μ
s(typ.)
- Block Erase time : 2ms(typ.)
Command/Address/Data Multiplexed I/O port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 1M Program/Erase Cycles
- Data Retention : 10 years
Command Register Operation
44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)
PIN CONFIGURATION
V
SS
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
I/O0
I/O1
I/O2
I/O3
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
V
CC
Q
I/O4
I/O5
I/O6
I/O7
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
SE
R/B
RE
CE
V
CC
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
44(40) TSOP (II)
STANDARD TYPE
NOTE
: Connect all V
CC
, V
CC
Q and V
SS
pins of each device to power supply outputs.
Do not leave V
CC
or V
SS
disconnected.
Pin Name
Pin Function
I/O0 ~ I/O7
Data Input/Outputs
CLE
Command Latch Enable
ALE
Address Latch Enable
CE
Chip Enable
RE
Read Enable
WE
Write Enable
WP
Write Protect
SE
Spare area Enable
R/B
Ready/Busy output
V
CC
Power(2.7V ~ 3.6V)
V
CC
Q
Output Buffer Power(2.7V~3.6V or 5.0V)
V
SS
Ground
N.C
No Connection
PIN DESCRIPTION
相關(guān)PDF資料
PDF描述
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參數(shù)描述
KM29U64000T 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
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