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參數(shù)資料
| 型號(hào)： | KM29U64000IT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 8 Bit NAND Flash Memory |
| 中文描述： | 8米× 8位NAND閃存 |
| 文件頁數(shù)： | 11/26頁 |
| 文件大?。?/td> | 481K |
| 代理商： | KM29U64000IT |
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KM29U64000T, KM29U64000IT
FLASH MEMORY
11
Erase Flow Chart
Start
SR. 6 = 1
or R/B = 1
SR. 0 = 0
No
*
Write 60H
Write Block Address
Write D0H
Write 70H
Erase Error
Yes
No
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
Erase Completed
Yes
Read Flow Chart
Start
Verify ECC
No
Write 00H
Write Address
Read Data
ECC Generation
Reclaim the Error
Page Read Completed
Yes
: copy the corrected whole block data to another
Block Replacement
When the error happens in Block "A", try to write the
data into another Block "B" by reloading from an exter-
nal buffer. Then, prevent further system access to
Block "A"(by creating a "invalid block" table or other
appropriate scheme.)
Buffer
memory
error occurs
Block A
Block B
Block Replacement
*
block (recommended for high reliability system)
*
NAND Flash Technical Notes
(Continued)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KM29U64000T | 8M x 8 Bit NAND Flash Memory |
| KM29U64000K1 | 8M x 8 Bit NAND Flash Memory(8M x 8位 NAND閃速存儲(chǔ)器) |
| KM29V040IT | 512K x 8 Bit NAND Flash Memory(512K x 8位 NAND閃速存儲(chǔ)器) |
| KM29V040T | 512K x 8 Bit NAND Flash Memory(512K x 8位 NAND閃速存儲(chǔ)器) |
| KM29V16000AIT | FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KM29U64000T | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
| KM29V16000AIT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| KM29V16000AR | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M X 8 BIT NAND FLASH MEMORY |
| KM29V16000ARS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M X 8 BIT NAN FLASH MEMORY |
| KM29V16000AT | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
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