參數(shù)資料
型號(hào): KM29U64000IT
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 8M x 8 Bit NAND Flash Memory
中文描述: 8米× 8位NAND閃存
文件頁(yè)數(shù): 18/26頁(yè)
文件大?。?/td> 481K
代理商: KM29U64000IT
KM29U64000T, KM29U64000IT
FLASH MEMORY
18
SEQUENTIAL ROW READ OPERATION
CE
CLE
R/B
I/O
0
~
7
WE
ALE
RE
00H
A
0
~ A
7
Busy
M
Output
A
9
~ A
16
A
17
~ A
22
Dout
N
Dout
N+1
Dout
N+2
Dout
527
Dout
0
Dout
1
Dout
2
Dout
527
Busy
M+1
Output
N
PAGE PROGRAM OPERATION
CE
CLE
R/B
I/O
0
~
7
WE
ALE
RE
80H
70H
I/O
0
Din
N
1 up to 528 Byte Data
Sequential Input
Din
N+1
Din
527
10H
A
0
~ A
7
A
17
~ A
22
A
9
~ A
16
Sequential Data
Input Command
Column
Address
Page(Row)
Address
Program
Command
Read Status
Command
I/O
0
=0 Successful Program
I/O
0
=1 Error in Program
t
PROG
t
WB
t
WC
t
WC
t
WC
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參數(shù)描述
KM29U64000T 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
KM29V16000AIT 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY
KM29V16000AR 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M X 8 BIT NAND FLASH MEMORY
KM29V16000ARS 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2M X 8 BIT NAN FLASH MEMORY
KM29V16000AT 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY