參數(shù)資料
型號(hào): KFM2G16Q2M-DED5
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: MuxOneNAND FLASH MEMORY
中文描述: MuxOneNAND閃存
文件頁數(shù): 121/124頁
文件大?。?/td> 1550K
代理商: KFM2G16Q2M-DED5
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
121
~50k ohm
INT
Internal Vcc
Rp
INT pol = ’Low’
t
I
Rp(ohm)
Ibusy
tf[us]
@ Vcc = 1.8V, Ta = 25
°
C , C
L
= 30pF
1K
10K
20K
30K
0.067
tr[ns]
0.586
1.02
1.356
6.49
6.49
6.49
6.49
1.75
0.18
0.09
40K
50K
1.623
1.84
6.49
6.49
0.045
0.06
0.036
Open(100K)
4.05
0.000
Busy State
Ready
VOH
tf
tr
VOL
Vss
Vcc
t
I
Rp(ohm)
Ibusy
tf[us]
KFN2G16Q2M @ Vcc = 1.8V, Ta = 25
°
C , C
L
= 30pF
1K
10K
20K
30K
0.122
tr[ns]
0.944
1.507
1.883
10.73
10.73
10.73
10.73
1.75
0.18
0.09
40K
50K
2.153
2.356
10.73
10.73
0.045
0.06
0.036
Open(100K)
2.912
0.000
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