參數(shù)資料
型號： KFG1216Q2A-DID6
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY
中文描述： 閃存
文件頁數(shù)： 90/114頁
文件大小： 1382K
代理商： KFG1216Q2A-DID6
OneNAND512(KFG1216x2A-xxB5)
FLASH MEMORY
90
4.1 Absolute Maximum Ratings
NOTES
:
1. Minimum DC voltage is -0.5V on Input/ Output pins. During transitions, this level should not fall to POR level(typ. 1.5V@1.8V device, 1.8V@2.65V/
3.3V device). Maximum DC voltage is Vcc+0.6V on input / output pins which, during transitions, may overshoot to Vcc+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
Vcc
Vcc (for 1.8V)
-0.5 to + 2.45
V
Vcc (for 2.65V/3.3V)
-0.5 to + 4.6
All Pins
V
IN
(for 1.8V)
V
IN
(for 2.65V/3.3V)
-0.5 to + 2.45
-0.5 to + 4.6
Temperature Under Bias
Extended
T
bias
-30 to +125
°
C
Industrial
-40 to +125
Storage Temperature
T
stg
-65 to +150
°
C
Short Circuit Output Current
I
OS
5
mA
Recommended Operating Temperature
T
A
(Extended Temp.)
-30 to +85
°
C
T
A
(Industrial Temp.)
-40 to +85
4.2 Operating Conditions
4.0 DC CHARACTERISTICS
Voltage reference to GND
NOTES
:
1. The system power should reach 1.7V after POR triggering level(typ. 1.5V) within 400us.
For 2.65V and 3.3V device, the system power should reach 2.2V after POR triggering level(typ. 1.8V) within 400us.
2. Vcc-Core (or Vcc) should reach the operating voltage level prior to or at the same time as Vcc-IO (or Vccq).
Parameter
Symbol
1.8V Device
2.65V Device
3.3V Device
Unit
Min
Typ.
Max
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
V
CC-
core / Vcc
1.7
1.8
1.95
2.4
2.65
2.9
2.7
3.3
3.6
V
V
CC-
IO / Vccq
V
SS
0
0
0
0
0
0
0
0
0
V
相關(guān)PDF資料
PDF描述
KFG1216Q2A-FEB5 FLASH MEMORY
KFG1216Q2A-FEB6 FLASH MEMORY
KFG1216Q2A-FED5 FLASH MEMORY
KFG1216U2A-DEB5 FLASH MEMORY
KFG1216U2A-DEB6 FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFG1216Q2A-FEB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216Q2A-FEB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216Q2A-FED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216Q2A-FED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1216Q2A-FIB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*