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參數(shù)資料
| 型號(hào)： | KBE00G003M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | NAND 512Mb*2 + Mobile SDRAM 256Mb*2 |
| 中文描述： | NAND閃存的512Mb * 2移動(dòng)SDRAM 256Mb的* 2 |
| 文件頁(yè)數(shù)： | 72/89頁(yè) |
| 文件大?。?/td> | 1238K |
| 代理商： | KBE00G003M |
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KBE00G003M-D411
MCP MEMORY
July 2005
72
Revision 0.1
0
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High level is necessary
CKE
CS
RAS
CAS
ADDR
BA0
BA1
DQ
A10/AP
WE
Power Up Sequence for Mobile SDRAM
DQM
Precharge
(All Bank)
t
RP
16
17
18
19
20
21
22
24
23
25
≈
≈
Key
RAa
Hi-Z
Hi-Z
t
ARFC
t
ARFC
Auto
Refresh
Auto
Refresh
Normal
MRS
Extended
MRS
Row Active
(A-Bank)
≈
≈
≈
≈
≈
≈
≈
≈
≈
≈
≈
≈
≈
≈
≈
≈
≈
≈
≈
*NOTE:
1. Apply power and attempt to maintain CKE at a high state and all other inputs may be undefined.
- Apply V
DD
before or at the same time as V
DDQ
.
2. Maintain stable power, stable clock and NOP input condition for a minimum of 200us.
3. Issue precharge commands for all banks of the devices.
4. Issue 2 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register.
6. Issue a extended mode register set command to define DS or PASR operating type of the device after normal MRS.
EMRS cycle is not mandatory and the EMRS command needs to be issued only when DS or PASR is used.
The default state without EMRS command issued is the half driver strength and full array refreshed.
The device is now ready for the operation selected by EMRS.
For operating with DS or PASR , set DS or PASR mode in EMRS setting stage.
In order to adjust another mode in the state of DS or PASR mode, additional EMRS set is required but power up sequence is not needed again
at this time. In that case, all banks have to be in idle state prior to adjusting EMRS set.
: Don’t care
Key
CLOCK
Hi
≈
≈
≈
≈
≈
≈
≈
≈
RAa
≈
≈
≈
≈
≈
≈
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≈
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KBE00G003M-D411 | NAND 512Mb*2 + Mobile SDRAM 256Mb*2 |
| KBE00S009M | 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2 |
| KBE00S009M-D411 | 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2 |
| KBJ2501 | 25A SINGLE PHASE SILICON BRIDGE RECTIFIER |
| KBJ2502 | 25A SINGLE PHASE SILICON BRIDGE RECTIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KBE00G003M-D411 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:NAND 512Mb*2 + Mobile SDRAM 256Mb*2 |
| KBE00S003M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2 |
| KBE00S003M-D411 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2 |
| KBE00S009M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND x 2 + 256Mb Mobile SDRAM x 2 |
| KBE00S009M-D411 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND x 2 + 256Mb Mobile SDRAM x 2 |
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