參數(shù)資料
型號(hào): K9F1208UOM
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 64M x 8 Bit NAND Flash Memory(64M x 8位與非閃速存儲(chǔ)器)
中文描述: 6400 × 8位NAND閃存(64米× 8位與非閃速存儲(chǔ)器)
文件頁(yè)數(shù): 9/41頁(yè)
文件大?。?/td> 1006K
代理商: K9F1208UOM
K9F1208U0M-YCB0, K9F1208U0M-YIB0
FLASH MEMORY
9
The device is arranged in four 128Mbit memory planes. Each plane contains 1,024 blocks and 528 byte page registers. This allows it
to perform simultaneous page program and block erase by selecting one page or block from each plane. The block address map is
configured so that multi-plane program/erase operations can be executed for every four sequential blocks.
Plane 0
(1024 Block)
Plane 1
(1024 Block)
Plane 2
(1024 Block)
Plane 3
(1024 Block)
Page 0
Page 1
Page 31
Page 30
Memory Map
Block 0
Page 0
Page 1
Page 31
Page 30
Block 1
Page 0
Page 1
Page 31
Page 30
Block 2
Page 0
Page 1
Page 31
Page 30
Block 3
Page 0
Page 1
Page 31
Page 30
Block 4
Page 0
Page 1
Page 31
Page 30
Block 5
Page 0
Page 1
Page 31
Page 30
Block 6
Page 0
Page 1
Page 31
Page 30
Block 7
Page 0
Page 1
Page 31
Page 30
Block 4088
Page 0
Page 1
Page 31
Page 30
Block 4089
Page 0
Page 1
Page 31
Page 30
Block 4090
Page 0
Page 1
Page 31
Page 30
Block 4091
Page 0
Page 1
Page 31
Page 30
Block 4092
Page 0
Page 1
Page 31
Page 30
Block 4093
Page 0
Page 1
Page 31
Page 30
Block 4094
Page 0
Page 1
Page 31
Page 30
Block 4095
528byte Page Registers
Figure 3. Memory Array Map
528byte Page Registers
528byte Page Registers
528byte Page Registers
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1208UOMYCB0 制造商:SAMSUNG 功能描述:K9F1208UOM-YCB0
K9F1208UOM-YCB0 制造商:SAMSUNG 功能描述:K9F1208UOM-YCB0
K9F1208X0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9F1208X0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bits NAND Flash Memory
K9F1216D0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory