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參數(shù)資料
| 型號： | K9F1208UOM |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64M x 8 Bit NAND Flash Memory(64M x 8位與非閃速存儲器) |
| 中文描述： | 6400 × 8位NAND閃存（64米× 8位與非閃速存儲器） |
| 文件頁數(shù)： | 34/41頁 |
| 文件大?。?/td> | 1006K |
| 代理商： | K9F1208UOM |
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K9F1208U0M-YCB0, K9F1208U0M-YIB0
FLASH MEMORY
34
Copy-Back Program
Figure 14. One Page Copy-Back program Operation
00h
A
0
~ A
7
& A
9
~ A
25
Source Address
I/O
0
~
7
R/B
Add.(4Cycles)
I/O
0
Pass
8Ah
70h
Fail
t
PROG
A
0
~ A
7
& A
9
~ A
25
Destination Address
Add.(4Cycles)
t
R
The copy-back program is configured to quickly and efficiently rewrite data stored in one page within the plane to another page within
the same plane without utilizing an external memory. Since the time-consuming sequently-reading and its re-loading cycles are
removed, the system performance is improved. The benefit is especially obvious when a portion of a block is updated and the rest of
the block also need to be copied to the newly assigned free block. The operation for performing a copy-back program is a sequential
execution of page-read without burst-reading cycle and copying-program with the address of destination page. A normal read opera-
tion with "00h" command and the address of the source page moves the whole 528byte data into the internal page registers. As soon
as the device returns to Ready state, Page-Copy Data-input command (8Ah) with the address cycles of destination page followed
may be written. The Program Confirm command (10h) is required to actually begin the programming operation. Copy-Back Program
operation is allowed only within the same memory plane. Once the Copy-Back Program is finished, any additional partial page pro-
gramming into the copied pages is prohibited before erase. A14 and A15 must be the same between source and target page.
Figure14 shows the command sequence for single plane operation.
10h
相關PDF資料 |
PDF描述 |
|---|---|
| K9F1608W0A- | 2M x 8 Bit NAND Flash Memory |
| K9F1608W0A-TCB0 | TV 128C 128#22D SKT RECP |
| K9F1608W0A-TIB0 | TV 37C 37#16 PIN RECP |
| K9F1G08Q0A | FLASH MEMORY |
| K9F1G08U0A | FLASH MEMORY |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K9F1208UOMYCB0 | 制造商:SAMSUNG 功能描述:K9F1208UOM-YCB0 |
| K9F1208UOM-YCB0 | 制造商:SAMSUNG 功能描述:K9F1208UOM-YCB0 |
| K9F1208X0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9F1208X0C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bits NAND Flash Memory |
| K9F1216D0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
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